Datasheets
AON7140 by:

Power Field-Effect Transistor, 148A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DFN-8

Part Details for AON7140 by Alpha & Omega Semiconductor

Overview of AON7140 by Alpha & Omega Semiconductor

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Price & Stock for AON7140

Part # Distributor Description Stock Price Buy
DISTI # AON7140-ND
DigiKey MOSFET N-CHANNEL 40V 50A 8DFN Min Qty: 3000 Lead time: 16 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 3,000 $0.6918
  • 6,000 $0.6658
  • 9,000 $0.6438
$0.6438 / $0.6918 Buy Now
DISTI # AON7140
TME Transistor: N-MOSFET, unipolar, 40V, 50A, 18.5W, DFN3.3x3.3 Min Qty: 1 1326
  • 1 $1.0700
  • 3 $0.9700
  • 10 $0.8600
  • 100 $0.7700
  • 500 $0.7200
$0.7200 / $1.0700 Buy Now
Chip1Cloud MOSFET N-CHANNEL 40V 50A 8DFN 2230
RFQ
Win Source Electronics MOSFET N-CHANNEL 40V 50A 8DFN 194870
  • 105 $0.4810
  • 255 $0.3950
  • 395 $0.3820
  • 545 $0.3700
  • 700 $0.3580
  • 935 $0.3210
$0.3210 / $0.4810 Buy Now

Part Details for AON7140

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AON7140 Part Data Attributes:

AON7140 Alpha & Omega Semiconductor
Buy Now Datasheet
Compare Parts:
AON7140 Alpha & Omega Semiconductor Power Field-Effect Transistor, 148A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DFN-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ALPHA & OMEGA SEMICONDUCTOR LTD
Package Description DFN-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Alpha & Omega Semiconductors
Avalanche Energy Rating (Eas) 135 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 148 A
Drain-source On Resistance-Max 0.0035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 65 pF
JESD-30 Code S-PDSO-N8
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 89 W
Pulsed Drain Current-Max (IDM) 550 A
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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