Datasheets
AON7296 by: Alpha & Omega Semiconductor

Transistor

Part Details for AON7296 by Alpha & Omega Semiconductor

Overview of AON7296 by Alpha & Omega Semiconductor

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Applications Consumer Electronics

Price & Stock for AON7296

Part # Distributor Description Stock Price Buy
DISTI # AON7296
TME Transistor: N-MOSFET, unipolar, 100V, 8A, 8.3W, DFN3x3 EP Min Qty: 3 1079
  • 3 $0.2530
  • 25 $0.1810
  • 100 $0.1600
  • 500 $0.1440
  • 3,000 $0.1340
$0.1340 / $0.2530 Buy Now
Chip 1 Exchange INSTOCK 2000
RFQ
CHIPMALL.COM LIMITED 100V 12.5A 20.8W 90m@4.5V,3A 2.8V@250uA 1 N-Channel DFN-83x3 MOSFETs ROHS 5756
  • 5 $0.2639
  • 50 $0.2108
  • 150 $0.1880
  • 500 $0.1595
  • 2,500 $0.1469
  • 5,000 $0.1393
$0.1393 / $0.2639 Buy Now
LCSC 100V 12.5A 20.8W 90m4.5V3A 2.8V250uA 1 N-channel DFN-8(3x3) MOSFETs ROHS 5761
  • 5 $0.2749
  • 50 $0.2196
  • 150 $0.1958
  • 500 $0.1662
  • 2,500 $0.1530
  • 5,000 $0.1451
$0.1451 / $0.2749 Buy Now
Win Source Electronics MOSFET N-CH 100V 5A 8DFN 44735
  • 260 $0.1932
  • 555 $0.1808
  • 860 $0.1746
  • 1,235 $0.1621
  • 1,605 $0.1559
  • 2,010 $0.1496
$0.1496 / $0.1932 Buy Now

Part Details for AON7296

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AON7296 Part Data Attributes

AON7296 Alpha & Omega Semiconductor
Buy Now Datasheet
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AON7296 Alpha & Omega Semiconductor Transistor
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ALPHA & OMEGA SEMICONDUCTOR LTD
Package Description SMALL OUTLINE, S-PDSO-F5
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Alpha & Omega Semiconductors
Avalanche Energy Rating (Eas) 0.8 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 12.5 A
Drain-source On Resistance-Max 0.066 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 25 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

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