There are no models available for this part yet.
Overview of AONR32320C by Alpha & Omega Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for AONR32320C by Alpha & Omega Semiconductor
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
785-AONR32320CCT-ND
|
DigiKey | MOSFET N-CH 30V 9.5A/12A 8DFN Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
8911 In Stock |
|
$0.0907 / $0.5600 | Buy Now | |
| LCSC | 30V 21m9.5A10V 2.3V250uA 1 N-Channel DFN-8-EP(3x3) MOSFETs ROHS | 180 |
|
$0.3525 / $0.3730 | Buy Now | ||
| Win Source Electronics | MOSFET N-CH 30V 9.5A/12A 8DFN / N-Channel 30 V 9.5A (Ta), 12A (Tc) 3.1W (Ta), 11W (Tc) Surface Mount 8-DFN-EP (3x3) | 13979 |
|
$0.5660 / $0.8480 | Buy Now |
CAD Models for AONR32320C by Alpha & Omega Semiconductor
Part Data Attributes for AONR32320C by Alpha & Omega Semiconductor
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|---|---|
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Part Life Cycle Code
|
Active
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Ihs Manufacturer
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ALPHA & OMEGA SEMICONDUCTOR LTD
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Package Description
|
,
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Date Of Intro
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2019-05-07
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Avalanche Energy Rating (Eas)
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6 mJ
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Case Connection
|
DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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30 V
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Drain Current-Max (ID)
|
12 A
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Drain-source On Resistance-Max
|
0.021 Ω
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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Feedback Cap-Max (Crss)
|
50 pF
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JESD-30 Code
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S-PDSO-F8
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Number of Elements
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1
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Number of Terminals
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8
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Operating Temperature-Min
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-55 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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SQUARE
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Package Style
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SMALL OUTLINE
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Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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11 W
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Pulsed Drain Current-Max (IDM)
|
36 A
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Surface Mount
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YES
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Terminal Form
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FLAT
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Terminal Position
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DUAL
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Time@Peak Reflow Temperature-Max (s)
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NOT SPECIFIED
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Transistor Application
|
SWITCHING
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Transistor Element Material
|
SILICON
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