Part Details for AONY36354 by Alpha & Omega Semiconductor
Overview of AONY36354 by Alpha & Omega Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Environmental Monitoring
Industrial Automation
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Price & Stock for AONY36354
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
785-1828-1-ND
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DigiKey | MOSFET 2N-CH 30V 18.5A/49A 8DFN Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
7062 In Stock |
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$0.3857 / $1.0300 | Buy Now |
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CHIPMALL.COM LIMITED | 30V 2 N-Channel DFN-8(5x6) MOSFETs ROHS | 2919 |
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$0.3158 / $0.5746 | Buy Now |
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LCSC | 30V 2 N-Channel DFN-8(5x6) MOSFETs ROHS | 2919 |
|
$0.3222 / $0.5863 | Buy Now |
Part Details for AONY36354
AONY36354 CAD Models
AONY36354 Part Data Attributes:
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AONY36354
Alpha & Omega Semiconductor
Buy Now
Datasheet
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Compare Parts:
AONY36354
Alpha & Omega Semiconductor
Power Field-Effect Transistor,
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2018-10-09 | |
| Avalanche Energy Rating (Eas) | 28 mJ | |
| Case Connection | DRAIN SOURCE | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 85 A | |
| Drain-source On Resistance-Max | 0.0035 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 55 pF | |
| JESD-30 Code | R-PDSO-N8 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 31.5 W | |
| Pulsed Drain Current-Max (IDM) | 185 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |