Part Details for AOTF11N60L by Alpha & Omega Semiconductor
Overview of AOTF11N60L by Alpha & Omega Semiconductor
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- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for AOTF11N60L
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
785-1435-5-ND
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DigiKey | MOSFET N-CH 600V 11A TO220-3F Min Qty: 1000 Lead time: 16 Weeks Container: Tube | Temporarily Out of Stock |
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$0.6414 | Buy Now |
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DISTI #
AOTF11N60L
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TME | Transistor: N-MOSFET, unipolar, 600V, 8A, 37.9W, TO220F Min Qty: 1 | 0 |
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$0.5410 / $0.8120 | RFQ |
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ComSIT USA | 600V,11A N-CHANNEL MOSFET Power Field-Effect Transistor, 11A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | Europe - 1000 |
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RFQ |
Part Details for AOTF11N60L
AOTF11N60L CAD Models
AOTF11N60L Part Data Attributes
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AOTF11N60L
Alpha & Omega Semiconductor
Buy Now
Datasheet
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AOTF11N60L
Alpha & Omega Semiconductor
Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
| Package Description | TO-220F, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Alpha & Omega Semiconductors | |
| Avalanche Energy Rating (Eas) | 690 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.65 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 16 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 37.9 W | |
| Pulsed Drain Current-Max (IDM) | 39 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |