Datasheets
AP9408GJ by: Advanced Power Electronics Corp

TRANSISTOR 57 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power

Part Details for AP9408GJ by Advanced Power Electronics Corp

Overview of AP9408GJ by Advanced Power Electronics Corp

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for AP9408GJ

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AP9408GJ Part Data Attributes

AP9408GJ Advanced Power Electronics Corp
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AP9408GJ Advanced Power Electronics Corp TRANSISTOR 57 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
Part Life Cycle Code Obsolete
Ihs Manufacturer ADVANCED POWER ELECTRONICS CORP
Part Package Code TO-251
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 57 A
Drain-source On Resistance-Max 0.01 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 228 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for AP9408GJ

This table gives cross-reference parts and alternative options found for AP9408GJ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AP9408GJ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AP9408AGP TRANSISTOR 53 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power Advanced Power Electronics Corp AP9408GJ vs AP9408AGP
AP9408AGH TRANSISTOR 53 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power Advanced Power Electronics Corp AP9408GJ vs AP9408AGH
FDP6696J69Z Power Field-Effect Transistor, 52A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN Fairchild Semiconductor Corporation AP9408GJ vs FDP6696J69Z
FDP6644SS62Z Power Field-Effect Transistor, 55A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation AP9408GJ vs FDP6644SS62Z
FDP6644S Power Field-Effect Transistor, 55A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation AP9408GJ vs FDP6644S
FDP7030BLSS62Z Power Field-Effect Transistor, 56A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation AP9408GJ vs FDP7030BLSS62Z
FDP6035LS62Z Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation AP9408GJ vs FDP6035LS62Z
FDP7030BLSJ69Z Power Field-Effect Transistor, 56A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN Fairchild Semiconductor Corporation AP9408GJ vs FDP7030BLSJ69Z
FDP6644SJ69Z Power Field-Effect Transistor, 55A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN Fairchild Semiconductor Corporation AP9408GJ vs FDP6644SJ69Z

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