Datasheets
APT1001RBVRG by:

Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Details for APT1001RBVRG by Microchip Technology Inc

Overview of APT1001RBVRG by Microchip Technology Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for APT1001RBVRG

Part # Distributor Description Stock Price Buy
DISTI # 78AH5544
Newark Mosfet Mos5 1000 V 1 Ohm To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT1001RBVRG Min Qty: 40 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $14.0900
  • 100 $12.1600
  • 250 $11.6900
  • 500 $11.4300
$11.4300 / $14.0900 Buy Now
DISTI # APT1001RBVRG-ND
DigiKey MOSFET N-CH 1000V 11A TO247 Min Qty: 1 Lead time: 43 Weeks Container: Tube Temporarily Out of Stock
  • 1 $14.0900
  • 100 $11.4250
$11.4250 / $14.0900 Buy Now
DISTI # APT1001RBVRG
Avnet Americas Trans MOSFET N-CH 1KV 11A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT1001RBVRG) RoHS: Compliant Min Qty: 40 Package Multiple: 1 Lead time: 43 Weeks, 0 Days Container: Tube 0
  • 1 $14.0900
  • 100 $12.1600
  • 250 $11.6900
  • 500 $11.4300
$11.4300 / $14.0900 Buy Now
DISTI # 494-APT1001RBVRG
Mouser Electronics MOSFET MOSFET MOS5 1000 V 1 Ohm TO-247 RoHS: Compliant 485
  • 1 $14.0900
  • 100 $12.1600
$12.1600 / $14.0900 Buy Now
DISTI # APT1001RBVRG
Microchip Technology Inc MOSFET MOS5 1000 V 1 Ohm TO-247, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $14.0900
  • 100 $12.1600
  • 250 $11.6900
  • 500 $11.4300
  • 1,000 $11.1600
  • 5,000 $10.7900
$10.7900 / $14.0900 Buy Now
Future Electronics 1000V, 11A, 1.0OHMS, POWERMOS, TO-247 RoHS: Compliant pbFree: Yes Min Qty: 210 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $12.2000
  • 60 $12.1400
  • 120 $12.0800
  • 150 $12.0500
  • 450 $11.9300
$11.9300 / $12.2000 Buy Now
Onlinecomponents.com Trans MOSFET N-CH 1KV 11A 3-Pin(3+Tab) TO-247 Tube 0
  • 5 $13.8700
  • 25 $12.5100
  • 50 $12.1700
  • 100 $11.6900
  • 250 $11.3900
  • 500 $11.2200
  • 1,000 $11.0500
$11.0500 / $13.8700 Buy Now
DISTI # APT1001RBVRG
Avnet Americas Trans MOSFET N-CH 1KV 11A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT1001RBVRG) RoHS: Compliant Min Qty: 40 Package Multiple: 1 Lead time: 43 Weeks, 0 Days Container: Tube 0
  • 1 $14.0900
  • 100 $12.1600
  • 250 $11.6900
  • 500 $11.4300
$11.4300 / $14.0900 Buy Now
DISTI # APT1001RBVRG
TME Transistor: N-MOSFET, POWER MOS 5®, unipolar, 1kV, 11A, Idm: 44A Min Qty: 1 0
  • 1 $20.4500
  • 3 $18.3200
  • 10 $16.0900
$16.0900 / $20.4500 RFQ
DISTI # APT1001RBVRG
Avnet Americas Trans MOSFET N-CH 1KV 11A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT1001RBVRG) RoHS: Compliant Min Qty: 40 Package Multiple: 1 Lead time: 43 Weeks, 0 Days Container: Tube 0
  • 1 $14.0900
  • 100 $12.1600
  • 250 $11.6900
  • 500 $11.4300
$11.4300 / $14.0900 Buy Now
NAC FG, MOSFET, 1000V, TO-247, RoHS RoHS: Compliant Min Qty: 27 Package Multiple: 1 Container: Tube 0
  • 1 $13.4400
  • 100 $12.1900
  • 500 $11.4300
  • 1,000 $11.1500
$11.1500 / $13.4400 Buy Now
DISTI # APT1001RBVRG
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 40 0
  • 40 $12.5600
  • 50 $12.2300
  • 100 $12.0700
$12.0700 / $12.5600 Buy Now
DISTI # APT1001RBVRG
Avnet Silica Trans MOSFET N-CH 1KV 11A 3-Pin(3+Tab) TO-247 (Alt: APT1001RBVRG) RoHS: Compliant Min Qty: 40 Package Multiple: 1 Lead time: 5 Weeks, 3 Days Silica - 0
Buy Now
DISTI # APT1001RBVRG
EBV Elektronik Trans MOSFET N-CH 1KV 11A 3-Pin(3+Tab) TO-247 (Alt: APT1001RBVRG) RoHS: Compliant Min Qty: 40 Package Multiple: 1 Lead time: 6 Weeks, 2 Days EBV - 0
Buy Now
Master Electronics Trans MOSFET N-CH 1KV 11A 3-Pin(3+Tab) TO-247 Tube 0
  • 5 $13.8700
  • 25 $12.5100
  • 50 $12.1700
  • 100 $11.6900
  • 250 $11.3900
  • 500 $11.2200
  • 1,000 $11.0500
$11.0500 / $13.8700 Buy Now

Part Details for APT1001RBVRG

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APT1001RBVRG Part Data Attributes

APT1001RBVRG Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT1001RBVRG Microchip Technology Inc Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 43 Weeks
Samacsys Manufacturer Microchip
Avalanche Energy Rating (Eas) 1210 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 44 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT1001RBVRG

This table gives cross-reference parts and alternative options found for APT1001RBVRG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT1001RBVRG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT1001RBVFRG Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Microsemi Corporation APT1001RBVRG vs APT1001RBVFRG
Part Number Description Manufacturer Compare
APT1001RBLC Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Advanced Power Technology APT1001RBVRG vs APT1001RBLC
IXFX12N90Q Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN IXYS Corporation APT1001RBVRG vs IXFX12N90Q
APT1001R1SN 10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, D3PAK-3 Microsemi Corporation APT1001RBVRG vs APT1001R1SN
IXFH12N100Q Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN IXYS Corporation APT1001RBVRG vs IXFH12N100Q
APT1001R1BFLC Power Field-Effect Transistor, 11A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Advanced Power Technology APT1001RBVRG vs APT1001R1BFLC
IXFV12N90P Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220, 3 PIN IXYS Corporation APT1001RBVRG vs IXFV12N90P
FMH11N90E Power Field-Effect Transistor, 11A I(D), 900V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-65, TO-3P(Q), 3 PIN Fuji Electric Co Ltd APT1001RBVRG vs FMH11N90E
IXFH12N100QS Power Field-Effect Transistor, 12A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IXYS Corporation APT1001RBVRG vs IXFH12N100QS
IXFV12N100P Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220, 3 PIN IXYS Corporation APT1001RBVRG vs IXFV12N100P
APT1001RBNRG Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Microsemi Corporation APT1001RBVRG vs APT1001RBNRG

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