APT10025JVR
Description: Power Field-Effect Transistor, 34A I(D), 1000V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4

Overview of APT10025JVR by Advanced Power Technology

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
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  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

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Part Data Attributes for APT10025JVR by Advanced Power Technology

APT10025JVR
Advanced Power Technology
-
-
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
ADVANCED POWER TECHNOLOGY INC
Package Description
ISOTOP-4
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
HIGH VOLTAGE
Avalanche Energy Rating (Eas)
3600 mJ
Case Connection
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
1000 V
Drain Current-Max (ID)
34 A
Drain-source On Resistance-Max
0.25 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PUFM-X4
Number of Elements
1
Number of Terminals
4
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
700 W
Pulsed Drain Current-Max (IDM)
136 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. APT10025JVR
    Advanced Power Technology
    Power Field-Effect Transistor, 34A I(D), 1000V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
    VS

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