Datasheets
APT10M09LVFRG by:

Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA

Part Details for APT10M09LVFRG by Microchip Technology Inc

Overview of APT10M09LVFRG by Microchip Technology Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for APT10M09LVFRG

Part # Distributor Description Stock Price Buy
DISTI # 78AH5516
Newark Fredfet Mos5 100 V 9 Mohm To-264 3 To-264 Tube Rohs Compliant: Yes |Microchip APT10M09LVFRG Min Qty: 25 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $23.8000
  • 100 $20.5500
  • 250 $19.7800
  • 500 $19.3300
$19.3300 / $23.8000 Buy Now
DISTI # APT10M09LVFRG-ND
DigiKey MOSFET N-CH 100V 100A TO264 Min Qty: 25 Lead time: 49 Weeks Container: Tube Temporarily Out of Stock
  • 25 $23.8000
$23.8000 Buy Now
DISTI # APT10M09LVFRG
Avnet Americas Power MOS V FREDFET N-Channel 100V 100A 3-Pin TO-264 - Rail/Tube (Alt: APT10M09LVFRG) RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Lead time: 49 Weeks, 0 Days Container: Tube 0
  • 1 $23.8000
  • 100 $20.5500
  • 250 $19.7800
  • 500 $19.3300
$19.3300 / $23.8000 Buy Now
DISTI # 494-APT10M09LVFRG
Mouser Electronics Discrete Semiconductor Modules FREDFET MOS5 100 V 9 mOhm TO-264 RoHS: Compliant 0
  • 1 $23.8000
  • 100 $20.5500
$20.5500 / $23.8000 Order Now
DISTI # APT10M09LVFRG
Microchip Technology Inc FREDFET MOS5 100 V 9 mOhm TO-264, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $23.8000
  • 100 $20.5500
  • 250 $19.7800
  • 500 $19.3300
  • 1,000 $18.8600
  • 5,000 $18.2300
$18.2300 / $23.8000 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 25 Package Multiple: 1 0
  • 25 $20.6300
$20.6300 Buy Now
Onlinecomponents.com Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-264 Tube 0
  • 1 $23.1100
  • 10 $21.1800
  • 25 $20.6000
  • 50 $19.7900
  • 100 $19.2800
  • 250 $18.9900
  • 500 $18.7100
$18.7100 / $23.1100 Buy Now
DISTI # APT10M09LVFRG
Avnet Americas Power MOS V FREDFET N-Channel 100V 100A 3-Pin TO-264 - Rail/Tube (Alt: APT10M09LVFRG) RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Lead time: 49 Weeks, 0 Days Container: Tube 0
  • 1 $23.8000
  • 100 $20.5500
  • 250 $19.7800
  • 500 $19.3300
$19.3300 / $23.8000 Buy Now
DISTI # APT10M09LVFRG
TME Transistor: N-MOSFET, POWER MOS 5®, unipolar, 100V, 100A, Idm: 400A Min Qty: 1 0
  • 1 $34.4400
  • 3 $31.0000
  • 10 $27.3900
$27.3900 / $34.4400 RFQ
DISTI # APT10M09LVFRG
Avnet Americas Power MOS V FREDFET N-Channel 100V 100A 3-Pin TO-264 - Rail/Tube (Alt: APT10M09LVFRG) RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Lead time: 49 Weeks, 0 Days Container: Tube 0
  • 1 $23.8000
  • 100 $20.5500
  • 250 $19.7800
  • 500 $19.3300
$19.3300 / $23.8000 Buy Now
NAC FG, FREDFET, 100V, TO-264, RoHS RoHS: Compliant Min Qty: 16 Package Multiple: 1 Container: Tube 0
  • 1 $22.1000
  • 100 $20.3600
  • 500 $19.3400
  • 800 $18.8700
$18.8700 / $22.1000 Buy Now
Master Electronics Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-264 Tube 0
  • 1 $23.1100
  • 10 $21.1800
  • 25 $20.6000
  • 50 $19.7900
  • 100 $19.2800
  • 250 $18.9900
  • 500 $18.7100
$18.7100 / $23.1100 Buy Now

Part Details for APT10M09LVFRG

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APT10M09LVFRG Part Data Attributes

APT10M09LVFRG Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT10M09LVFRG Microchip Technology Inc Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 49 Weeks
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 3000 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.009 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-264AA
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT10M09LVFRG

This table gives cross-reference parts and alternative options found for APT10M09LVFRG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT10M09LVFRG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT10M09LVFR Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA Microchip Technology Inc APT10M09LVFRG vs APT10M09LVFR
APT10M09LVFR Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN Microsemi Corporation APT10M09LVFRG vs APT10M09LVFR
Part Number Description Manufacturer Compare
BUK9610-100B Power Field-Effect Transistor Nexperia APT10M09LVFRG vs BUK9610-100B
IRFPS3810PBF Power Field-Effect Transistor, 105A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPER-247, 3 PIN Infineon Technologies AG APT10M09LVFRG vs IRFPS3810PBF
SUM110N10-09-E3 Power Field-Effect Transistor, 110A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN Vishay Intertechnologies APT10M09LVFRG vs SUM110N10-09-E3
IRFPS3810 Power Field-Effect Transistor, 105A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-247, 3 PIN Infineon Technologies AG APT10M09LVFRG vs IRFPS3810
IRFPS3810 Power Field-Effect Transistor, 105A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-247, 3 PIN International Rectifier APT10M09LVFRG vs IRFPS3810
SUM110N10-09 Power Field-Effect Transistor, 110A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Vishay Siliconix APT10M09LVFRG vs SUM110N10-09
APT10M09LVFR Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA Microchip Technology Inc APT10M09LVFRG vs APT10M09LVFR
SUM110N10-09-E3 TRANSISTOR 110 A, 100 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power Vishay Siliconix APT10M09LVFRG vs SUM110N10-09-E3
APT10M09LVFR Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN Microsemi Corporation APT10M09LVFRG vs APT10M09LVFR

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