Datasheets
APT1201R4BLLG by: Microchip Technology Inc

Power Field-Effect Transistor, 9A I(D), 1200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Details for APT1201R4BLLG by Microchip Technology Inc

Overview of APT1201R4BLLG by Microchip Technology Inc

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Price & Stock for APT1201R4BLLG

Part # Distributor Description Stock Price Buy
DISTI # 78AH5594
Newark Mosfet Mos7 1200 V 1.4 Ohm To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT1201R4BLLG Min Qty: 50 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $13.2600
  • 100 $11.4400
  • 250 $11.0200
  • 500 $10.7600
$10.7600 / $13.2600 Buy Now
DISTI # 150-APT1201R4BLLG-ND
DigiKey MOSFET N-CH 1200V 9A TO247 Min Qty: 50 Lead time: 43 Weeks Container: Tube Temporarily Out of Stock
  • 50 $13.2600
$13.2600 Buy Now
DISTI # APT1201R4BLLG
Avnet Americas Transistor MOSFET N-Channel 1200V 9A 3-Pin TO-247 - Rail/Tube (Alt: APT1201R4BLLG) RoHS: Not Compliant Min Qty: 50 Package Multiple: 1 Container: Tube 0
  • 1 $13.2600
  • 100 $11.4400
  • 250 $11.0200
  • 500 $10.7600
$10.7600 / $13.2600 Buy Now
DISTI # 494-APT1201R4BLLG
Mouser Electronics MOSFET MOSFET MOS7 1200 V 1.4 Ohm TO-247 RoHS: Compliant 0
  • 1 $13.2600
  • 100 $11.4400
$11.4400 / $13.2600 Order Now
DISTI # APT1201R4BLLG
Microchip Technology Inc MOSFET MOS7 1200 V 1.4 Ohm TO-247, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $13.2600
  • 100 $11.4400
  • 250 $11.0200
  • 500 $10.7600
  • 1,000 $10.5000
  • 5,000 $10.1500
$10.1500 / $13.2600 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 1 0
  • 50 $11.4800
$11.4800 Buy Now
Onlinecomponents.com MOSFET (Metal Oxide) Transistor - N-Channel - 1200 V - 9A Continuous Drain (Id) @ 25°C - 1.4Ohm @ 4.5A, 10V - TO-247-3 Package - Through Hole. 458 Factory Stock
  • 5 $13.0600
  • 25 $11.7900
  • 50 $11.4600
  • 100 $11.0100
  • 250 $10.7300
  • 500 $10.5700
  • 1,000 $10.4100
$10.4100 / $13.0600 Buy Now
DISTI # APT1201R4BLLG
Avnet Americas Transistor MOSFET N-Channel 1200V 9A 3-Pin TO-247 - Rail/Tube (Alt: APT1201R4BLLG) RoHS: Not Compliant Min Qty: 50 Package Multiple: 1 Container: Tube 0
  • 1 $13.2600
  • 100 $11.4400
  • 250 $11.0200
  • 500 $10.7600
$10.7600 / $13.2600 Buy Now
DISTI # APT1201R4BLLG
TME Transistor: N-MOSFET, unipolar, 1.2kV, 9A, 300W, TO247-3 Min Qty: 1 0
  • 1 $24.7800
  • 3 $22.3000
  • 10 $19.7000
$19.7000 / $24.7800 RFQ
NAC   RoHS: Compliant Min Qty: 29 Package Multiple: 1 0
  • 1 $12.6600
  • 100 $11.4800
  • 500 $10.7600
  • 1,000 $10.5000
$10.5000 / $12.6600 Buy Now
DISTI # APT1201R4BLLG
EBV Elektronik Transistor MOSFET N-Channel 1200V 9A 3-Pin TO-247 (Alt: APT1201R4BLLG) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 6 Weeks, 2 Days EBV - 0
Buy Now
Master Electronics MOSFET (Metal Oxide) Transistor - N-Channel - 1200 V - 9A Continuous Drain (Id) @ 25°C - 1.4Ohm @ 4.5A, 10V - TO-247-3 Package - Through Hole. 458 Factory Stock
  • 5 $13.0600
  • 25 $11.7900
  • 50 $11.4600
  • 100 $11.0100
  • 250 $10.7300
  • 500 $10.5700
  • 1,000 $10.4100
$10.4100 / $13.0600 Buy Now

Part Details for APT1201R4BLLG

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APT1201R4BLLG Part Data Attributes:

APT1201R4BLLG Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT1201R4BLLG Microchip Technology Inc Power Field-Effect Transistor, 9A I(D), 1200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 43 Weeks
Avalanche Energy Rating (Eas) 1210 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 1.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 36 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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