Part Details for APT18M100S by Microchip Technology Inc
Overview of APT18M100S by Microchip Technology Inc
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for APT18M100S
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH5669
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Newark | Mosfet Mos8 1000 V 18 A To-268 2 To-268 Tube Rohs Compliant: Yes |Microchip APT18M100S Min Qty: 60 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$8.5900 / $10.5700 | Buy Now |
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DISTI #
150-APT18M100S-ND
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DigiKey | MOSFET N-CH 1000V 18A D3PAK Min Qty: 1 Lead time: 43 Weeks Container: Tube | Temporarily Out of Stock |
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$9.1300 / $10.5700 | Buy Now |
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DISTI #
APT18M100S
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Avnet Americas | Power MOS 8 MOSFET N-Channel 1000V 18A 3-Pin TO-268 - Rail/Tube (Alt: APT18M100S) RoHS: Not Compliant Min Qty: 60 Package Multiple: 1 Lead time: 43 Weeks, 0 Days Container: Tube | 0 |
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$8.5900 / $10.5700 | Buy Now |
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DISTI #
494-APT18M100S
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Mouser Electronics | MOSFET MOSFET MOS8 1000 V 18 A TO-268 RoHS: Compliant | 0 |
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$9.1300 / $10.5700 | Order Now |
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DISTI #
APT18M100S
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Microchip Technology Inc | MOSFET MOS8 1000 V 18 A TO-268, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes |
0 Alternates Available |
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$8.0900 / $10.5700 | Buy Now |
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Future Electronics | Product DescriptionFG, MOSFET, 1000V, TO-268 FG, MOSFET, 1000V, TO-268 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube | 0Tube |
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$8.6200 / $8.8300 | Buy Now |
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Onlinecomponents.com | Trans MOSFET N-CH Si 1KV 18A 3-Pin(2+Tab) D3PAK Tube | 0 |
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$8.3100 / $10.4200 | Buy Now |
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DISTI #
APT18M100S
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Avnet Americas | Power MOS 8 MOSFET N-Channel 1000V 18A 3-Pin TO-268 - Rail/Tube (Alt: APT18M100S) RoHS: Not Compliant Min Qty: 60 Package Multiple: 1 Lead time: 43 Weeks, 0 Days Container: Tube | 0 |
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$8.5900 / $10.5700 | Buy Now |
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DISTI #
APT18M100S
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TME | Transistor: N-MOSFET, unipolar, 1kV, 12A, Idm: 68A, 625W, D3PAK Min Qty: 1 | 0 |
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$12.1800 / $15.3100 | RFQ |
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NAC | FG, MOSFET, 1000V, TO-268 RoHS: Compliant Min Qty: 36 Package Multiple: 1 Container: Tube | 0 |
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$8.3800 / $10.1000 | Buy Now |
Part Details for APT18M100S
APT18M100S CAD Models
APT18M100S Part Data Attributes:
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APT18M100S
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
APT18M100S
Microchip Technology Inc
Power Field-Effect Transistor, 18A I(D), 1000V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 43 Weeks | |
| Samacsys Manufacturer | Microchip | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 1070 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.7 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e1 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 68 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for APT18M100S
This table gives cross-reference parts and alternative options found for APT18M100S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT18M100S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFH18N90P | Power Field-Effect Transistor, 18A I(D), 900V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN | Littelfuse Inc | APT18M100S vs IXFH18N90P |
| IXFT18N100Q3 | Power Field-Effect Transistor, | Littelfuse Inc | APT18M100S vs IXFT18N100Q3 |
| APT20M18LVRG | Power Field-Effect Transistor, 100A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | Microchip Technology Inc | APT18M100S vs APT20M18LVRG |
| IXFH18N100Q3 | Power Field-Effect Transistor, | Littelfuse Inc | APT18M100S vs IXFH18N100Q3 |
| APT20M18LVR | Power Field-Effect Transistor, 100A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | Microchip Technology Inc | APT18M100S vs APT20M18LVR |
| IXFH18N100Q3 | Power Field-Effect Transistor, 18A I(D), 1000V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | APT18M100S vs IXFH18N100Q3 |
| IXFT18N90P | Power Field-Effect Transistor, 18A I(D), 900V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN | Littelfuse Inc | APT18M100S vs IXFT18N90P |
| APT20M18B2VRG | Power Field-Effect Transistor, 100A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | APT18M100S vs APT20M18B2VRG |
| IXFV18N90PS | Power Field-Effect Transistor, 18A I(D), 900V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220SMD, 3 PIN | IXYS Corporation | APT18M100S vs IXFV18N90PS |
| APT20M18B2VFRG | Power Field-Effect Transistor, 100A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | Microchip Technology Inc | APT18M100S vs APT20M18B2VFRG |