Datasheets
APT200GN60J by:

Insulated Gate Bipolar Transistor, 250A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4

Part Details for APT200GN60J by Microsemi Corporation

Overview of APT200GN60J by Microsemi Corporation

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Applications Industrial Automation Electronic Manufacturing

Part Details for APT200GN60J

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APT200GN60J Part Data Attributes

APT200GN60J Microsemi Corporation
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APT200GN60J Microsemi Corporation Insulated Gate Bipolar Transistor, 250A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer MICROSEMI CORP
Part Package Code ISOTOP
Package Description ISOTOP-4
Pin Count 4
Manufacturer Package Code ISOTOP
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Microsemi Corporation
Case Connection ISOLATED
Collector Current-Max (IC) 250 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PUFM-X4
JESD-609 Code e1
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 682 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1210 ns
Turn-on Time-Nom (ton) 75 ns

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