Part Details for APT200GT60JR by Microsemi Corporation
Overview of APT200GT60JR by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Part Details for APT200GT60JR
APT200GT60JR CAD Models
APT200GT60JR Part Data Attributes
|
|
APT200GT60JR
Microsemi Corporation
Buy Now
Datasheet
|
Compare Parts:
APT200GT60JR
Microsemi Corporation
Insulated Gate Bipolar Transistor, 195A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | ISOTOP | |
| Package Description | ROHS COMPLIANT, ISOTOP-4 | |
| Pin Count | 4 | |
| Manufacturer Package Code | ISOTOP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Microsemi Corporation | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 195 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| JESD-30 Code | R-XUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1232 ns | |
| Turn-on Time-Nom (ton) | 228 ns |