Part Details for APT26F120B2 by Microsemi Corporation
Overview of APT26F120B2 by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
Part Details for APT26F120B2
APT26F120B2 CAD Models
APT26F120B2 Part Data Attributes:
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APT26F120B2
Microsemi Corporation
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Datasheet
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APT26F120B2
Microsemi Corporation
Power Field-Effect Transistor, 27A I(D), 1200V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, T-MAX, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Package Description | ROHS COMPLIANT, T-MAX, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 2165 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 27 A | |
| Drain-source On Resistance-Max | 0.58 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1135 W | |
| Pulsed Drain Current-Max (IDM) | 105 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | PURE MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for APT26F120B2
This table gives cross-reference parts and alternative options found for APT26F120B2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT26F120B2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APT28M120B2 | Power Field-Effect Transistor, 29A I(D), 1200V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TMAX-3 | Microsemi Corporation | APT26F120B2 vs APT28M120B2 |
| APT26F120B2 | Power Field-Effect Transistor, 27A I(D), 1200V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | APT26F120B2 vs APT26F120B2 |