Datasheets
APT29F100B2 by:

Power Field-Effect Transistor, 30A I(D), 1000V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for APT29F100B2 by Microchip Technology Inc

Overview of APT29F100B2 by Microchip Technology Inc

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Price & Stock for APT29F100B2

Part # Distributor Description Stock Price Buy
DISTI # 78AH5809
Newark Fredfet Mos8 1000 V 29 A To-247 Max 3 T-Max Tube Rohs Compliant: Yes |Microchip APT29F100B2 Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $18.9800
  • 100 $16.4000
  • 250 $15.7600
  • 500 $15.4100
$15.4100 / $18.9800 Buy Now
DISTI # APT29F100B2-ND
DigiKey MOSFET N-CH 1000V 30A T-MAX Min Qty: 1 Lead time: 49 Weeks Container: Tube 59
In Stock
  • 1 $18.9800
  • 100 $15.4125
$15.4125 / $18.9800 Buy Now
DISTI # APT29F100B2
Avnet Americas Power MOS 8 FREDFET N-Channel 1000V 30A 3-Pin TO-247 - Rail/Tube (Alt: APT29F100B2) RoHS: Not Compliant Min Qty: 30 Package Multiple: 1 Lead time: 49 Weeks, 0 Days Container: Tube 0
  • 1 $18.9800
  • 100 $16.4000
  • 250 $15.7600
  • 500 $15.4100
$15.4100 / $18.9800 Buy Now
DISTI # 494-APT29F100B2
Mouser Electronics MOSFET FREDFET MOS8 1000 V 29 A TO-247 MAX RoHS: Compliant 27
  • 1 $18.9800
  • 100 $16.4000
$16.4000 / $18.9800 Buy Now
DISTI # APT29F100B2
Microchip Technology Inc FREDFET MOS8 1000 V 29 A TO-247 MAX, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $18.9800
  • 100 $16.4000
  • 250 $15.7600
  • 500 $15.4100
  • 1,000 $15.0400
  • 5,000 $14.5400
$14.5400 / $18.9800 Buy Now
Future Electronics MOSFET Power FREDFET - MOS8 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $15.4200
  • 60 $15.3200
  • 90 $15.2700
  • 120 $15.2300
  • 150 $15.1200
$15.1200 / $15.4200 Buy Now
Onlinecomponents.com Trans MOSFET N-CH Si 1KV 30A 3-Pin(3+Tab) T-MAX Tube 50 On Order
  • 1 $18.4200
  • 10 $16.8800
  • 25 $16.4200
  • 50 $15.9800
  • 100 $15.3700
  • 250 $15.1400
  • 500 $14.9100
$14.9100 / $18.4200 Buy Now
DISTI # APT29F100B2
Avnet Americas Power MOS 8 FREDFET N-Channel 1000V 30A 3-Pin TO-247 - Rail/Tube (Alt: APT29F100B2) RoHS: Not Compliant Min Qty: 30 Package Multiple: 1 Lead time: 49 Weeks, 0 Days Container: Tube 0
  • 1 $18.9800
  • 100 $16.4000
  • 250 $15.7600
  • 500 $15.4100
$15.4100 / $18.9800 Buy Now
DISTI # APT29F100B2
TME Transistor: N-MOSFET, unipolar, 1kV, 30A, 1040W, T-Max Min Qty: 1 0
  • 1 $35.4900
  • 3 $31.9400
  • 10 $28.2200
$28.2200 / $35.4900 RFQ
NAC FG, FREDFET, 1000V, TO-247 T-MAX, RoHS RoHS: Compliant Min Qty: 20 Package Multiple: 1 Container: Tube 0
  • 1 $17.6100
  • 100 $16.2200
  • 500 $15.4100
  • 800 $15.0400
$15.0400 / $17.6100 Buy Now
Master Electronics Trans MOSFET N-CH Si 1KV 30A 3-Pin(3+Tab) T-MAX Tube 50 On Order
  • 1 $18.4200
  • 10 $16.8800
  • 25 $16.4200
  • 50 $15.9800
  • 100 $15.3700
  • 250 $15.1400
  • 500 $14.9100
$14.9100 / $18.4200 Buy Now

Part Details for APT29F100B2

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APT29F100B2 Part Data Attributes:

APT29F100B2 Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT29F100B2 Microchip Technology Inc Power Field-Effect Transistor, 30A I(D), 1000V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 49 Weeks
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 1875 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.44 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 120 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT29F100B2

This table gives cross-reference parts and alternative options found for APT29F100B2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT29F100B2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXFK30N100Q2 Power Field-Effect Transistor, 30A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN IXYS Corporation APT29F100B2 vs IXFK30N100Q2
IXFX32N90P Power Field-Effect Transistor, 32A I(D), 900V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN Littelfuse Inc APT29F100B2 vs IXFX32N90P
IXTN30N100L Power Field-Effect Transistor, 30A I(D), 1000V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 IXYS Corporation APT29F100B2 vs IXTN30N100L
APT10030L2VRG Power Field-Effect Transistor, 33A I(D), 1000V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264MAX, 3 PIN Microsemi Corporation APT29F100B2 vs APT10030L2VRG
IXFX32N100Q3 Power Field-Effect Transistor, Littelfuse Inc APT29F100B2 vs IXFX32N100Q3
IXFX32N100P Power Field-Effect Transistor, 32A I(D), 1000V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN Littelfuse Inc APT29F100B2 vs IXFX32N100P
IXFK30N100Q2 Power Field-Effect Transistor, 30A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN Littelfuse Inc APT29F100B2 vs IXFK30N100Q2
APT31M100B2 Power Field-Effect Transistor, 32A I(D), 1000V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc APT29F100B2 vs APT31M100B2
IXTN30N100L Power Field-Effect Transistor, Littelfuse Inc APT29F100B2 vs IXTN30N100L
APT29F100L Power Field-Effect Transistor, 30A I(D), 1000V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA Microchip Technology Inc APT29F100B2 vs APT29F100L

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