Part Details for APT31N80JC3 by Advanced Power Technology
Overview of APT31N80JC3 by Advanced Power Technology
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Part Details for APT31N80JC3
APT31N80JC3 CAD Models
APT31N80JC3 Part Data Attributes
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APT31N80JC3
Advanced Power Technology
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Datasheet
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APT31N80JC3
Advanced Power Technology
Power Field-Effect Transistor, 31A I(D), 800V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
Package Description | ISOTOP-4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 670 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 31 A | |
Drain-source On Resistance-Max | 0.145 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PUFM-X4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 93 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |