Datasheets
APT5010JN by:

Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4

Part Details for APT5010JN by Advanced Power Technology

Overview of APT5010JN by Advanced Power Technology

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

Part Details for APT5010JN

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APT5010JN Part Data Attributes

APT5010JN Advanced Power Technology
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APT5010JN Advanced Power Technology Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC
Package Description ISOTOP-4
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 48 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 660 pF
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 520 W
Power Dissipation-Max (Abs) 520 W
Pulsed Drain Current-Max (IDM) 192 A
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 100 ns
Turn-on Time-Max (ton) 80 ns

Alternate Parts for APT5010JN

This table gives cross-reference parts and alternative options found for APT5010JN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT5010JN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT5010JN 48A, 500V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4 Microsemi Corporation APT5010JN vs APT5010JN
Part Number Description Manufacturer Compare
IXFN100N20 Power Field-Effect Transistor, 100A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 Littelfuse Inc APT5010JN vs IXFN100N20
IXFN44N50U2 Power Field-Effect Transistor, 44A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 IXYS Corporation APT5010JN vs IXFN44N50U2
IXFN48N50Q Power Field-Effect Transistor, 48A I(D), 500V, 100ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 IXYS Corporation APT5010JN vs IXFN48N50Q
IXTN61N50 Power Field-Effect Transistor, 61A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 IXYS Corporation APT5010JN vs IXTN61N50
BUK581-60A TRANSISTOR 1.5 A, 60 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors APT5010JN vs BUK581-60A
APT50M60JN Power Field-Effect Transistor, 71A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Advanced Power Technology APT5010JN vs APT50M60JN
APT5010JN 48A, 500V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4 Microsemi Corporation APT5010JN vs APT5010JN
IXFN36N60 Power Field-Effect Transistor, 36A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-227B, MINIBLOC-4 IXYS Corporation APT5010JN vs IXFN36N60
IXTN36N50 Power Field-Effect Transistor, 36A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-227B, MINIBLOC-4 IXYS Corporation APT5010JN vs IXTN36N50
BUK417-500BE TRANSISTOR 28 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors APT5010JN vs BUK417-500BE

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