Part Details for APT5010JN by Microsemi Corporation
Overview of APT5010JN by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
Part Details for APT5010JN
APT5010JN CAD Models
APT5010JN Part Data Attributes
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APT5010JN
Microsemi Corporation
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Datasheet
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APT5010JN
Microsemi Corporation
48A, 500V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
Part Package Code | ISOTOP | |
Package Description | FLANGE MOUNT, R-PUFM-X4 | |
Pin Count | 4 | |
Manufacturer Package Code | ISOTOP | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Microsemi Corporation | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 48 A | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 660 pF | |
JESD-30 Code | R-PUFM-X4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 520 W | |
Power Dissipation-Max (Abs) | 520 W | |
Pulsed Drain Current-Max (IDM) | 192 A | |
Qualification Status | Not Qualified | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 100 ns | |
Turn-on Time-Max (ton) | 80 ns |
Alternate Parts for APT5010JN
This table gives cross-reference parts and alternative options found for APT5010JN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT5010JN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IXFE44N50Q | Power Field-Effect Transistor, 39A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN | IXYS Corporation | APT5010JN vs IXFE44N50Q |
IXFN100N20 | Power Field-Effect Transistor, 100A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | Littelfuse Inc | APT5010JN vs IXFN100N20 |
APT6018JN | Power Field-Effect Transistor, 35A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Advanced Power Technology | APT5010JN vs APT6018JN |
IXFX44N50Q | Power Field-Effect Transistor, 44A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | Littelfuse Inc | APT5010JN vs IXFX44N50Q |
IXFN64N50PD3 | Power Field-Effect Transistor, 50A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | Littelfuse Inc | APT5010JN vs IXFN64N50PD3 |
IXFN100N20 | Power Field-Effect Transistor, 100A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | IXYS Corporation | APT5010JN vs IXFN100N20 |
APT40M75JN | 56A, 400V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4 | Microsemi Corporation | APT5010JN vs APT40M75JN |
IXFN48N50Q | Power Field-Effect Transistor, 48A I(D), 500V, 100ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | Littelfuse Inc | APT5010JN vs IXFN48N50Q |
IXFN44N60 | Power Field-Effect Transistor, 44A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | APT5010JN vs IXFN44N60 |
IXFK44N50F | Power Field-Effect Transistor, 44A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 | IXYS Corporation | APT5010JN vs IXFK44N50F |