Datasheets
APT50M60JN by:

71A, 500V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4

Part Details for APT50M60JN by Microsemi Corporation

Overview of APT50M60JN by Microsemi Corporation

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Applications Industrial Automation Electronic Manufacturing

Part Details for APT50M60JN

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APT50M60JN Part Data Attributes

APT50M60JN Microsemi Corporation
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APT50M60JN Microsemi Corporation 71A, 500V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC
Part Package Code ISOTOP
Package Description FLANGE MOUNT, R-PUFM-X4
Pin Count 4
Manufacturer Package Code ISOTOP
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 71 A
Drain-source On Resistance-Max 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 1200 pF
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 690 W
Power Dissipation-Max (Abs) 690 W
Pulsed Drain Current-Max (IDM) 284 A
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 125 ns
Turn-on Time-Max (ton) 105 ns

Alternate Parts for APT50M60JN

This table gives cross-reference parts and alternative options found for APT50M60JN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT50M60JN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT50M60JN Power Field-Effect Transistor, 71A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Advanced Power Technology APT50M60JN vs APT50M60JN
Part Number Description Manufacturer Compare
IXFE44N50Q Power Field-Effect Transistor, 39A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN IXYS Corporation APT50M60JN vs IXFE44N50Q
IXFN48N50U2 Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 IXYS Corporation APT50M60JN vs IXFN48N50U2
IXTN79N20 Power Field-Effect Transistor, 79A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-227B, MINIBLOC-4 IXYS Corporation APT50M60JN vs IXTN79N20
IXTN58N50 Power Field-Effect Transistor, 58A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 IXYS Corporation APT50M60JN vs IXTN58N50
APT50M60JN Power Field-Effect Transistor, 71A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Advanced Power Technology APT50M60JN vs APT50M60JN
IXFE48N50QD3 Power Field-Effect Transistor, 41A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN IXYS Corporation APT50M60JN vs IXFE48N50QD3
APT5012JNU2 43A, 500V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET Microsemi Corporation APT50M60JN vs APT5012JNU2
APT5010JN Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Advanced Power Technology APT50M60JN vs APT5010JN
IXFN80N50Q3 Power Field-Effect Transistor, 63A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 IXYS Corporation APT50M60JN vs IXFN80N50Q3
IXFN100N20 Power Field-Effect Transistor, 100A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 Littelfuse Inc APT50M60JN vs IXFN100N20

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