Datasheets
APT50M60L2VRG by:

Power Field-Effect Transistor, 77A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for APT50M60L2VRG by Microchip Technology Inc

Overview of APT50M60L2VRG by Microchip Technology Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for APT50M60L2VRG

Part # Distributor Description Stock Price Buy
DISTI # 78AH6019
Newark Mosfet Mos5 500 V 60 Mohm To-264 Max 3 To-264 Max Tube Rohs Compliant: Yes |Microchip APT50M60L2VRG Min Qty: 25 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $37.9700
  • 100 $32.7900
  • 250 $31.5600
  • 500 $30.8000
$30.8000 / $37.9700 Buy Now
DISTI # APT50M60L2VRG
Avnet Americas Transistor MOSFET N-Channel 500V 77A 3-Pin TO-264 - Rail/Tube (Alt: APT50M60L2VRG) RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Lead time: 43 Weeks, 0 Days Container: Tube 0
  • 1 $37.9700
  • 100 $32.7900
  • 250 $31.5600
  • 500 $30.8000
$30.8000 / $37.9700 Buy Now
DISTI # 494-APT50M60L2VRG
Mouser Electronics Discrete Semiconductor Modules MOSFET MOS5 500 V 60 mOhm TO-264 MAX RoHS: Compliant 80
  • 1 $37.9700
  • 100 $32.7900
$32.7900 / $37.9700 Buy Now
DISTI # APT50M60L2VRG
Microchip Technology Inc MOSFET MOS5 500 V 60 mOhm TO-264 MAX, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $37.9700
  • 100 $32.7900
  • 250 $31.5600
  • 500 $30.8000
  • 1,000 $30.0600
  • 5,000 $29.0800
$29.0800 / $37.9700 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 25 Package Multiple: 1 0
  • 25 $32.8700
$32.8700 Buy Now
Onlinecomponents.com MOSFET (Metal Oxide) Transistor - N-Channel - 500 V - 77A Continuous Drain (Id) @ 25°C - 60m Ohm @ 10V - TO-264 MAX Package - Through Hole. 0
  • 7 $44.0200
  • 13 $35.5500
  • 19 $34.0600
  • 25 $33.3700
$33.3700 / $44.0200 Buy Now
DISTI # APT50M60L2VRG
Avnet Americas Transistor MOSFET N-Channel 500V 77A 3-Pin TO-264 - Rail/Tube (Alt: APT50M60L2VRG) RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Lead time: 43 Weeks, 0 Days Container: Tube 0
  • 1 $37.9700
  • 100 $32.7900
  • 250 $31.5600
  • 500 $30.8000
$30.8000 / $37.9700 Buy Now
DISTI # APT50M60L2VRG
TME Transistor: N-MOSFET, POWER MOS 5®, unipolar, 500V, 77A, Idm: 308A Min Qty: 1 0
  • 1 $54.8800
  • 3 $49.3900
  • 10 $43.6400
$43.6400 / $54.8800 RFQ
NAC MOSFET MOS5 500 V 60 mOhm TO-264 MAX, TO-264 MAX (L2) Tube RoHS: Compliant Min Qty: 10 Package Multiple: 1 0
  • 1 $35.2100
  • 100 $32.4300
  • 500 $30.8100
  • 800 $30.0600
$30.0600 / $35.2100 Buy Now
Master Electronics MOSFET (Metal Oxide) Transistor - N-Channel - 500 V - 77A Continuous Drain (Id) @ 25°C - 60m Ohm @ 10V - TO-264 MAX Package - Through Hole. 0
  • 7 $44.0200
  • 13 $35.5500
  • 19 $34.0600
  • 25 $33.3700
$33.3700 / $44.0200 Buy Now

Part Details for APT50M60L2VRG

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APT50M60L2VRG Part Data Attributes:

APT50M60L2VRG Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT50M60L2VRG Microchip Technology Inc Power Field-Effect Transistor, 77A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description TO-264MAX, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 43 Weeks
Samacsys Manufacturer Microchip
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 3200 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 77 A
Drain-source On Resistance-Max 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 308 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT50M60L2VRG

This table gives cross-reference parts and alternative options found for APT50M60L2VRG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT50M60L2VRG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT50M60L2VRG Power Field-Effect Transistor, 77A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN Microsemi Corporation APT50M60L2VRG vs APT50M60L2VRG
APT50M60L2VFR Power Field-Effect Transistor, 77A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN Microsemi Corporation APT50M60L2VRG vs APT50M60L2VFR
APT50M60L2VR Power Field-Effect Transistor, 77A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN Microsemi Corporation APT50M60L2VRG vs APT50M60L2VR
Part Number Description Manufacturer Compare
APT50M60L2VRG Power Field-Effect Transistor, 77A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN Microsemi Corporation APT50M60L2VRG vs APT50M60L2VRG
APT50M60L2VR Power Field-Effect Transistor, 77A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN Microsemi Corporation APT50M60L2VRG vs APT50M60L2VR
APT50M60L2VFR Power Field-Effect Transistor, 77A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN Microsemi Corporation APT50M60L2VRG vs APT50M60L2VFR

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