Datasheets
APT6030BVR by:

Power Field-Effect Transistor, 21A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

Part Details for APT6030BVR by Advanced Power Technology

Overview of APT6030BVR by Advanced Power Technology

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for APT6030BVR

Part # Distributor Description Stock Price Buy
Quest Components MOSFET Transistor, N-Channel, TO-247AD 425
  • 1 $16.4250
  • 158 $11.6800
  • 343 $10.9500
$10.9500 / $16.4250 Buy Now
Chip1Cloud Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 73300
RFQ

Part Details for APT6030BVR

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APT6030BVR Part Data Attributes:

APT6030BVR Advanced Power Technology
Buy Now Datasheet
Compare Parts:
APT6030BVR Advanced Power Technology Power Field-Effect Transistor, 21A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC
Package Description TO-247, 3 PIN
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1300 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 21 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 84 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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