Datasheets
APT6030BVRG by:

Power Field-Effect Transistor, 21A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

Part Details for APT6030BVRG by Microchip Technology Inc

Overview of APT6030BVRG by Microchip Technology Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for APT6030BVRG

Part # Distributor Description Stock Price Buy
DISTI # 78AH6167
Newark Mosfet Mos5 600 V 30 Ohm To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT6030BVRG Min Qty: 50 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $12.5200
  • 100 $10.8000
  • 250 $10.4000
  • 500 $10.1500
$10.1500 / $12.5200 Buy Now
DISTI # APT6030BVRG-ND
DigiKey MOSFET N-CH 600V 21A TO247 Min Qty: 50 Lead time: 43 Weeks Container: Tube Temporarily Out of Stock
  • 50 $12.5200
$12.5200 Buy Now
DISTI # APT6030BVRG
Avnet Americas Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT6030BVRG) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 43 Weeks, 0 Days Container: Tube 0
  • 1 $12.5200
  • 100 $10.8000
  • 250 $10.4000
  • 500 $10.1500
$10.1500 / $12.5200 Buy Now
DISTI # 494-APT6030BVRG
Mouser Electronics MOSFET MOSFET MOS5 600 V 30 Ohm TO-247 RoHS: Compliant 175
  • 1 $12.5200
  • 100 $10.8000
$10.8000 / $12.5200 Buy Now
DISTI # APT6030BVRG
Microchip Technology Inc MOSFET MOS5 600 V 300 mOhm TO-247, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $12.5200
  • 100 $10.8000
  • 250 $10.4000
  • 500 $10.1500
  • 1,000 $9.9100
  • 5,000 $9.5900
$9.5900 / $12.5200 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 1 0
  • 50 $10.8300
$10.8300 Buy Now
Onlinecomponents.com Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-247 Tube 949 Factory Stock
  • 5 $12.3200
  • 25 $11.1200
  • 50 $10.8100
  • 100 $10.3900
  • 250 $10.1200
  • 500 $9.9700
  • 1,000 $9.8200
$9.8200 / $12.3200 Buy Now
DISTI # APT6030BVRG
Avnet Americas Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT6030BVRG) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 43 Weeks, 0 Days Container: Tube 0
  • 1 $12.5200
  • 100 $10.8000
  • 250 $10.4000
  • 500 $10.1500
$10.1500 / $12.5200 Buy Now
DISTI # APT6030BVRG
TME Transistor: N-MOSFET, POWER MOS 5®, unipolar, 600V, 21A, Idm: 84A Min Qty: 1 0
  • 1 $18.1700
  • 3 $16.3600
  • 10 $14.3800
$14.3800 / $18.1700 RFQ
DISTI # APT6030BVRG
Avnet Americas Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT6030BVRG) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 43 Weeks, 0 Days Container: Tube 0
  • 1 $12.5200
  • 100 $10.8000
  • 250 $10.4000
  • 500 $10.1500
$10.1500 / $12.5200 Buy Now
NAC FG, MOSFET, 600V,TO-247, RoHS RoHS: Compliant Min Qty: 30 Package Multiple: 1 Container: Tube 0
  • 1 $11.9400
  • 100 $10.8300
  • 500 $10.1500
  • 1,000 $9.9000
$9.9000 / $11.9400 Buy Now
NexGen Digital   20
RFQ
Master Electronics Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-247 Tube 949 Factory Stock
  • 5 $12.3200
  • 25 $11.1200
  • 50 $10.8100
  • 100 $10.3900
  • 250 $10.1200
  • 500 $9.9700
  • 1,000 $9.8200
$9.8200 / $12.3200 Buy Now

Part Details for APT6030BVRG

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APT6030BVRG Part Data Attributes

APT6030BVRG Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT6030BVRG Microchip Technology Inc Power Field-Effect Transistor, 21A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description TO-247, 3 PIN
Reach Compliance Code compliant
Factory Lead Time 43 Weeks
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1300 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 21 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 84 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT6030BVRG

This table gives cross-reference parts and alternative options found for APT6030BVRG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT6030BVRG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT6030BVR Power Field-Effect Transistor, 21A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Microsemi Corporation APT6030BVRG vs APT6030BVR
APT6030BVR Power Field-Effect Transistor, 21A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD Microchip Technology Inc APT6030BVRG vs APT6030BVR
APT6030BVFRG Power Field-Effect Transistor, 21A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Microsemi Corporation APT6030BVRG vs APT6030BVFRG
Part Number Description Manufacturer Compare
IXFH26N49Q Power Field-Effect Transistor, 26A I(D), 490V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 Littelfuse Inc APT6030BVRG vs IXFH26N49Q
APT5020BFLC 26A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN Microsemi Corporation APT6030BVRG vs APT5020BFLC
APT5020SLC 26A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, D3PAK-3 Microsemi Corporation APT6030BVRG vs APT5020SLC
IXTT28N50Q Power Field-Effect Transistor, 28A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN IXYS Corporation APT6030BVRG vs IXTT28N50Q
SIHG32N50D-E3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix APT6030BVRG vs SIHG32N50D-E3
IXFT26N50QSN Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3/2 PIN IXYS Corporation APT6030BVRG vs IXFT26N50QSN
IXFT32N50Q Power Field-Effect Transistor, 32A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN IXYS Corporation APT6030BVRG vs IXFT32N50Q
IXTH30N45S Power Field-Effect Transistor, 30A I(D), 450V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, 4 PIN IXYS Corporation APT6030BVRG vs IXTH30N45S
APT6030BVR Power Field-Effect Transistor, 21A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD Microchip Technology Inc APT6030BVRG vs APT6030BVR
IXFH32N50S Power Field-Effect Transistor, 32A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IXYS Corporation APT6030BVRG vs IXFH32N50S

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