Part Details for APT94N65B2C6 by Microsemi Corporation
Overview of APT94N65B2C6 by Microsemi Corporation
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Part Details for APT94N65B2C6
APT94N65B2C6 CAD Models
APT94N65B2C6 Part Data Attributes
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APT94N65B2C6
Microsemi Corporation
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Datasheet
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APT94N65B2C6
Microsemi Corporation
Power Field-Effect Transistor
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MICROSEMI CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Microsemi Corporation | |
Avalanche Energy Rating (Eas) | 1160 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 95 A | |
Drain-source On Resistance-Max | 0.035 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 833 W | |
Pulsed Drain Current-Max (IDM) | 282 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |