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Transistors Power Field-Effect Transistors APTM20HM20STG

APTM20HM20STG
Description: Power Field-Effect Transistor, 89A I(D), 200V, 0.024ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MODULE-14

Overview of APTM20HM20STG by Advanced Power Technology

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for APTM20HM20STG by Advanced Power Technology
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Part Data Attributes for APTM20HM20STG by Advanced Power Technology
Parametric Data

APTM20HM20STG
Advanced Power Technology
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
ADVANCED POWER TECHNOLOGY INC
Package Description
ROHS COMPLIANT, MODULE-14
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
2500 mJ
Case Connection
ISOLATED
Configuration
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
89 A
Drain-source On Resistance-Max
0.024 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-XUFM-X14
Number of Elements
4
Number of Terminals
14
Operating Mode
ENHANCEMENT MODE
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
356 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. APTM20HM20STG
    Advanced Power Technology
    Power Field-Effect Transistor, 89A I(D), 200V, 0.024ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MODULE-14
    VS

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