Part Details for APTM20HM20STG by Microsemi Corporation
Overview of APTM20HM20STG by Microsemi Corporation
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Part Details for APTM20HM20STG
APTM20HM20STG CAD Models
APTM20HM20STG Part Data Attributes
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APTM20HM20STG
Microsemi Corporation
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Datasheet
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APTM20HM20STG
Microsemi Corporation
Power Field-Effect Transistor, 89A I(D), 200V, 0.024ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SP4, 14 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MICROSEMI CORP | |
Part Package Code | MODULE | |
Package Description | ROHS COMPLIANT, SP4, 14 PIN | |
Pin Count | 14 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 2500 mJ | |
Case Connection | ISOLATED | |
Configuration | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 89 A | |
Drain-source On Resistance-Max | 0.024 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XUFM-X14 | |
Number of Elements | 4 | |
Number of Terminals | 14 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 357 W | |
Pulsed Drain Current-Max (IDM) | 356 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |