Datasheets
APTMC120AM08CD3AG by:

Power Field-Effect Transistor, 250A I(D), 1200V, 0.01ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

Part Details for APTMC120AM08CD3AG by Microchip Technology Inc

Overview of APTMC120AM08CD3AG by Microchip Technology Inc

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Price & Stock for APTMC120AM08CD3AG

Part # Distributor Description Stock Price Buy
DISTI # APTMC120AM08CD3AG-ND
DigiKey MOSFET 2N-CH 1200V 250A D3 Lead time: 77 Weeks Container: Bulk Temporarily Out of Stock
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DISTI # APTMC120AM08CD3AG
Avnet Americas Trans MOSFET Array Dual N-CH 1200V 250A 11-Pin Case D3 - Boxed Product (Development Kits) (Alt: APTMC120AM08CD3AG) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 77 Weeks, 0 Days Container: Box 0
RFQ
DISTI # APTMC120AM08CD3AG
Microchip Technology Inc CC7100, Projected EOL: 2025-02-21 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $1,964.9000
  • 50 $1,646.2700
  • 100 $1,486.9500
  • 250 $1,327.6300
  • 500 $1,168.3200
  • 1,000 $1,062.1100
  • 5,000 $977.1400
$977.1400 / $1,964.9000 Buy Now
DISTI # APTMC120AM08CD3AG
Avnet Americas Trans MOSFET Array Dual N-CH 1200V 250A 11-Pin Case D3 - Boxed Product (Development Kits) (Alt: APTMC120AM08CD3AG) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 77 Weeks, 0 Days Container: Box 0
RFQ
NAC DOR CC7100 RoHS: Compliant Min Qty: 100 Package Multiple: 1 Container: Box 0
RFQ
DISTI # APTMC120AM08CD3
Richardson RFPD SILICON CARBIDE MOSFET MODULES RoHS: Compliant Min Qty: 1 0
RFQ
DISTI # APTMC120AM08CD3AG
Avnet Silica Trans MOSFET Array Dual N-CH 1200V 250A 11-Pin Case D3 (Alt: APTMC120AM08CD3AG) RoHS: Compliant Min Qty: 100 Package Multiple: 1 Lead time: 5 Weeks, 3 Days Silica - 0
Buy Now
DISTI # APTMC120AM08CD3AG
EBV Elektronik Trans MOSFET Array Dual N-CH 1200V 250A 11-Pin Case D3 (Alt: APTMC120AM08CD3AG) RoHS: Compliant Min Qty: 100 Package Multiple: 1 Lead time: 7 Weeks, 4 Days EBV - 0
Buy Now

Part Details for APTMC120AM08CD3AG

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APTMC120AM08CD3AG Part Data Attributes:

APTMC120AM08CD3AG Microchip Technology Inc
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APTMC120AM08CD3AG Microchip Technology Inc Power Field-Effect Transistor, 250A I(D), 1200V, 0.01ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description MODULE-7
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 77 Weeks
Case Connection ISOLATED
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 250 A
Drain-source On Resistance-Max 0.01 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 125 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1100 W
Pulsed Drain Current-Max (IDM) 550 A
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

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