Part Details for APTMC120AM12CT3AG by Microsemi Corporation
Overview of APTMC120AM12CT3AG by Microsemi Corporation
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Part Details for APTMC120AM12CT3AG
APTMC120AM12CT3AG CAD Models
APTMC120AM12CT3AG Part Data Attributes:
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APTMC120AM12CT3AG
Microsemi Corporation
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APTMC120AM12CT3AG
Microsemi Corporation
Power Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Package Description | MODULE-25 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 220 A | |
| Drain-source On Resistance-Max | 0.012 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XUFM-X25 | |
| Number of Elements | 2 | |
| Number of Terminals | 25 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 925 W | |
| Pulsed Drain Current-Max (IDM) | 440 A | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |