Part Details for APTMC120AM55CT1AG by Microchip Technology Inc
Overview of APTMC120AM55CT1AG by Microchip Technology Inc
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for APTMC120AM55CT1AG
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH5392
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Newark | Pm-Mosfet-Sic-Sbd-Sp1 Sp1 Tube Rohs Compliant: Yes |Microchip APTMC120AM55CT1AG Min Qty: 2 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
APTMC120AM55CT1AG-ND
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DigiKey | MOSFET 2N-CH 1200V 55A SP1 Lead time: 77 Weeks Container: Bulk | Temporarily Out of Stock |
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Buy Now | |
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DISTI #
APTMC120AM55CT1AG
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Avnet Americas | Trans MOSFET Array Dual N-CH 1200V 55A 12-Pin Case SP-1 - Rail/Tube (Alt: APTMC120AM55CT1AG) RoHS: Compliant Min Qty: 4 Package Multiple: 1 Lead time: 77 Weeks, 0 Days Container: Tube | 0 |
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RFQ | |
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DISTI #
APTMC120AM55CT1AG
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Microchip Technology Inc | CC9701, Projected EOL: 2025-02-21 RoHS: Compliant pbFree: Yes |
0 Alternates Available |
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$185.6000 / $296.1800 | Buy Now |
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DISTI #
APTMC120AM55CT1AG
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Avnet Americas | Trans MOSFET Array Dual N-CH 1200V 55A 12-Pin Case SP-1 - Rail/Tube (Alt: APTMC120AM55CT1AG) RoHS: Compliant Min Qty: 4 Package Multiple: 1 Lead time: 77 Weeks, 0 Days Container: Tube | 0 |
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RFQ | |
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DISTI #
APTMC120AM55CT1AG
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TME | Module, SiC diode/transistor, 1.2kV, 42A, SP1, Press-in PCB, 250W Min Qty: 1 | 0 |
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$293.0000 / $326.0000 | RFQ |
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NAC | CC9701 RoHS: Compliant Min Qty: 100 Package Multiple: 1 Container: Tube | 0 |
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RFQ | |
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DISTI #
APTMC120AM55CTX
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Richardson RFPD | SILICON CARBIDE MOSFET MODULES RoHS: Compliant Min Qty: 1 | 0 |
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RFQ | |
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DISTI #
APTMC120AM55CT1AG
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EBV Elektronik | Trans MOSFET Array Dual N-CH 1200V 55A 12-Pin Case SP-1 (Alt: APTMC120AM55CT1AG) RoHS: Compliant Min Qty: 4 Package Multiple: 1 Lead time: 7 Weeks, 4 Days | EBV - 0 |
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Buy Now |
Part Details for APTMC120AM55CT1AG
APTMC120AM55CT1AG CAD Models
APTMC120AM55CT1AG Part Data Attributes:
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APTMC120AM55CT1AG
Microchip Technology Inc
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Datasheet
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APTMC120AM55CT1AG
Microchip Technology Inc
Power Field-Effect Transistor, 55A I(D), 1200V, 0.049ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | MODULE-12 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 77 Weeks | |
| Case Connection | ISOLATED | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 55 A | |
| Drain-source On Resistance-Max | 0.049 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XUFM-X12 | |
| Number of Elements | 2 | |
| Number of Terminals | 12 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 125 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |