Datasheets
APTMC120TAM34CT3AG by:

Power Field-Effect Transistor, 74A I(D), 1200V, 0.034ohm, 6-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

Part Details for APTMC120TAM34CT3AG by Microchip Technology Inc

Overview of APTMC120TAM34CT3AG by Microchip Technology Inc

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Price & Stock for APTMC120TAM34CT3AG

Part # Distributor Description Stock Price Buy
DISTI # 78AH5399
Newark Pm-Mosfet-Sic-Sbd-Sp3F Sp6-P Tube Rohs Compliant: Yes |Microchip APTMC120TAM34CT3AG Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $819.0200
$819.0200 Buy Now
DISTI # APTMC120TAM34CT3AG-ND
DigiKey SIC 6N-CH 1200V 74A SP3 Lead time: 77 Weeks Container: Bulk Temporarily Out of Stock
Buy Now
DISTI # APTMC120TAM34CT3AG
Avnet Americas IPM Intelligent Power Module 74A 4000V 32-Pin Tube - Rail/Tube (Alt: APTMC120TAM34CT3AG) RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Lead time: 77 Weeks, 0 Days Container: Tube 0
RFQ
DISTI # 494-APTMC120TAM34CT3
Mouser Electronics Discrete Semiconductor Modules CC3193 RoHS: Compliant 0
  • 2 $819.0200
$819.0200 Order Now
DISTI # APTMC120TAM34CT3AG
Microchip Technology Inc CC3193, Projected EOL: 2025-02-21 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $1,292.1700
  • 50 $1,070.6400
  • 100 $959.8800
  • 250 $922.9600
  • 500 $812.2100
  • 1,000 $738.3800
  • 5,000 $649.7700
$649.7700 / $1,292.1700 Buy Now
DISTI # APTMC120TAM34CT3AG
Avnet Americas IPM Intelligent Power Module 74A 4000V 32-Pin Tube - Rail/Tube (Alt: APTMC120TAM34CT3AG) RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Lead time: 77 Weeks, 0 Days Container: Tube 0
RFQ
NAC CC3193 RoHS: Compliant Min Qty: 100 Package Multiple: 1 Container: Tube 0
RFQ
DISTI # APTMC120TAM34CT
Richardson RFPD SILICON CARBIDE MOSFET MODULES RoHS: Compliant Min Qty: 1 0
RFQ

Part Details for APTMC120TAM34CT3AG

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APTMC120TAM34CT3AG Part Data Attributes:

APTMC120TAM34CT3AG Microchip Technology Inc
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APTMC120TAM34CT3AG Microchip Technology Inc Power Field-Effect Transistor, 74A I(D), 1200V, 0.034ohm, 6-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description MODULE-28
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 77 Weeks
Case Connection ISOLATED
Configuration COMPLEX
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 74 A
Drain-source On Resistance-Max 0.034 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XUFM-X28
Number of Elements 6
Number of Terminals 28
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 375 W
Pulsed Drain Current-Max (IDM) 150 A
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

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