Datasheets
APTML100U60R020T1AG by:

Power Field-Effect Transistor, 20A I(D), 1000V, 0.72ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for APTML100U60R020T1AG by Microchip Technology Inc

Overview of APTML100U60R020T1AG by Microchip Technology Inc

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for APTML100U60R020T1AG

Part # Distributor Description Stock Price Buy
DISTI # 78AH5405
Newark Pm-Mosfet-4-Linear-Sp1 Sp1 Tube Rohs Compliant: Yes |Microchip APTML100U60R020T1AG Min Qty: 3 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $138.1500
  • 50 $115.1300
  • 100 $101.3100
  • 250 $101.3100
  • 500 $101.3100
$101.3100 / $138.1500 Buy Now
DISTI # APTML100U60R020T1AG-ND
DigiKey MOSFET N-CH 1000V 20A SP1 Min Qty: 1 Lead time: 20 Weeks Container: Bulk 12
In Stock
  • 1 $138.1500
$138.1500 Buy Now
DISTI # APTML100U60R020T1A
Avnet Americas ELECTRONIC LOAD DEDICATED TO POWER SUPPLIES ANDBATTERY DISCHARGE TESTING - Rail/Tube (Alt: APTML100U60R020T1A) RoHS: Compliant Min Qty: 6 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tube 0
RFQ
DISTI # APTML100U60R020T1A
Avnet Americas ELECTRONIC LOAD DEDICATED TO POWER SUPPLIES ANDBATTERY DISCHARGE TESTING - Rail/Tube (Alt: APTML100U60R020T1A) RoHS: Compliant Min Qty: 6 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tube 0
RFQ
NAC DOR CC8058 RoHS: Compliant Min Qty: 100 Package Multiple: 1 Container: Tube 0
RFQ
DISTI # APTML100U60R02X
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 6 0
  • 6 $123.6400
$123.6400 Buy Now

Part Details for APTML100U60R020T1AG

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APTML100U60R020T1AG Part Data Attributes:

APTML100U60R020T1AG Microchip Technology Inc
Buy Now Datasheet
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APTML100U60R020T1AG Microchip Technology Inc Power Field-Effect Transistor, 20A I(D), 1000V, 0.72ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description ROHS COMPLIANT, SP1, 12 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.72 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XUFM-T6
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 520 W
Pulsed Drain Current-Max (IDM) 74 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APTML100U60R020T1AG

This table gives cross-reference parts and alternative options found for APTML100U60R020T1AG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APTML100U60R020T1AG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT10050JFLC Power Field-Effect Transistor, 19A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Advanced Power Technology APTML100U60R020T1AG vs APT10050JFLC
APT10050JLC Power Field-Effect Transistor, 19A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Advanced Power Technology APTML100U60R020T1AG vs APT10050JLC
APT10050JVFR Power Field-Effect Transistor, 19A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc APTML100U60R020T1AG vs APT10050JVFR
APT10043JVR Power Field-Effect Transistor, 22A I(D), 1000V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Microsemi Corporation APTML100U60R020T1AG vs APT10043JVR
IXTN21N100 Power Field-Effect Transistor, 21A I(D), 1000V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-227B, MINIBLOC-4 IXYS Corporation APTML100U60R020T1AG vs IXTN21N100
IXFR21N100Q Power Field-Effect Transistor, 18A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN Littelfuse Inc APTML100U60R020T1AG vs IXFR21N100Q
IXFR24N100Q3 Power Field-Effect Transistor, Littelfuse Inc APTML100U60R020T1AG vs IXFR24N100Q3
APT10050JVR Power Field-Effect Transistor, 19A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Microsemi Corporation APTML100U60R020T1AG vs APT10050JVR
APT10050JFLC 19A, 1000V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4 Microsemi Corporation APTML100U60R020T1AG vs APT10050JFLC

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