Datasheets
AT45DB641E-SHN2B-T by:

64Mbit, 1.7 V to 3.6 V Range SPI Serial Flash Memory, SOIC-W, 2000/Tape & Reel

Part Details for AT45DB641E-SHN2B-T by Renesas Electronics Corporation

Results Overview of AT45DB641E-SHN2B-T by Renesas Electronics Corporation

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AT45DB641E-SHN2B-T Information

AT45DB641E-SHN2B-T by Renesas Electronics Corporation is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
AT45DB641E-SHN2B-T Renesas Electronics Corporation 64Mbit, 1.7 V to 3.6 V Range SPI Serial Flash Memory
AT45DB641E-MHN2B-T Renesas Electronics Corporation 64Mbit, 1.7 V to 3.6 V Range SPI Serial Flash Memory
AT45DB641E-UUN-T Renesas Electronics Corporation 64Mbit, 1.7 V to 3.6 V Range SPI Serial Flash Memory

Price & Stock for AT45DB641E-SHN2B-T

Part # Distributor Description Stock Price Buy
DISTI # 67AC3555
Newark 64 Mbit, Wide Vcc (1.7V To 3.6V), -40C To 85C, 512 Byte Binary Page Mode, Soic-W 208Mil (Tape & Reel), Single Spi Dataflash Rohs Compliant: Yes |Renesas AT45DB641E-SHN2B-T RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # AT45DB641E-SHN2B-T
Avnet Americas Flash Serial-SPI 1.8V/2.5V/3.3V 64Mbit 64M x 1bit 8-Pin SOIC EIAJ T/R - Tape and Reel (Alt: AT45DB641E-SHN2B-T) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 2,000 $3.6830
  • 4,000 $3.6068
  • 8,000 $3.5306
  • 12,000 $3.4544
  • 16,000 $3.3782
$3.3782 / $3.6830 Buy Now
DISTI # AT45DB641E-SHN2BT
TME IC: FLASH memory, 64MbFLASH, SPI / RapidS, 85MHz, 1.7÷3.6V, SO8-W Min Qty: 1 2977
  • 1 $5.3300
  • 3 $5.0400
  • 10 $4.8600
  • 25 $4.2800
  • 100 $4.1800
$4.1800 / $5.3300 Buy Now
DISTI # AT45DB641E-SHN2B-T
Avnet Silica Flash Serial-SPI 1.8V/2.5V/3.3V 64Mbit 64M x 1bit 8-Pin SOIC EIAJ T/R (Alt: AT45DB641E-SHN2B-T) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 19 Weeks, 0 Days Silica - 14000
Buy Now

Part Details for AT45DB641E-SHN2B-T

AT45DB641E-SHN2B-T CAD Models

AT45DB641E-SHN2B-T Part Data Attributes

AT45DB641E-SHN2B-T Renesas Electronics Corporation
Buy Now Datasheet
Compare Parts:
AT45DB641E-SHN2B-T Renesas Electronics Corporation 64Mbit, 1.7 V to 3.6 V Range SPI Serial Flash Memory, SOIC-W, 2000/Tape & Reel
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer RENESAS ELECTRONICS CORP
Part Package Code SOIC-W
Reach Compliance Code compliant
Factory Lead Time 18 Weeks
Samacsys Manufacturer Renesas Electronics
Clock Frequency-Max (fCLK) 85 MHz
JESD-30 Code R-PDSO-G8
JESD-609 Code e4
Length 5.29 mm
Memory Density 67108864 bit
Memory IC Type FLASH
Memory Width 1
Moisture Sensitivity Level 1
Number of Functions 1
Number of Terminals 8
Number of Words 67108864 words
Number of Words Code 64000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 64MX1
Package Body Material PLASTIC/EPOXY
Package Code SOP
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Parallel/Serial SERIAL
Programming Voltage 1.8 V
Seated Height-Max 2.16 mm
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 2.3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form GULL WING
Terminal Pitch 1.27 mm
Terminal Position DUAL
Type NOR TYPE
Width 5.24 mm

AT45DB641E-SHN2B-T Related Parts

AT45DB641E-SHN2B-T Frequently Asked Questions (FAQ)

  • The recommended operating voltage range for the AT45DB641E-SHN2B-T is 2.7V to 3.6V.

  • The HOLD pin should be pulled high during power-up and power-down sequences to prevent unwanted data corruption or loss.

  • The AT45DB641E-SHN2B-T supports up to 100,000 erase cycles.

  • Wear leveling can be implemented by distributing write and erase operations across the entire memory space, using techniques such as dynamic wear leveling or static wear leveling.

  • The recommended method is to poll the RDY/BUSY pin, which goes low during a write or erase operation and returns high when the operation is complete.

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