Datasheets
AUIRF3805 by:

Power Field-Effect Transistor, 160A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

Part Details for AUIRF3805 by Infineon Technologies AG

Overview of AUIRF3805 by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy

Price & Stock for AUIRF3805

Part # Distributor Description Stock Price Buy
DISTI # 27T9867
Newark Mosfet, n Channel,55V,160A, to220Ab, Transistor Polarity:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:210A, On Resistance Rds(On):0.0026Ohm, Transistor Mounting:Through Hole, Rds(On) Test Voltage Vgs:10V, Msl:- Rohs Compliant: Yes |Infineon AUIRF3805 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $3.9600
  • 10 $3.3600
  • 25 $3.1500
  • 50 $2.9400
  • 100 $2.7400
$2.7400 / $3.9600 Buy Now
Rochester Electronics AUIRF3805 - 55V-60V N-Channel Automotive MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 48754
  • 1 $1.9000
  • 25 $1.8700
  • 100 $1.7900
  • 500 $1.7100
  • 1,000 $1.6200
$1.6200 / $1.9000 Buy Now

Part Details for AUIRF3805

AUIRF3805 CAD Models

AUIRF3805 Part Data Attributes:

AUIRF3805 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
AUIRF3805 Infineon Technologies AG Power Field-Effect Transistor, 160A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ROHS COMPLIANT, PLASTIC PACKAGE-3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 940 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 160 A
Drain-source On Resistance-Max 0.0033 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 890 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for AUIRF3805

This table gives cross-reference parts and alternative options found for AUIRF3805. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF3805, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF3805PBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG AUIRF3805 vs IRF3805PBF
AUIRF3805 Power Field-Effect Transistor, 160A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 International Rectifier AUIRF3805 vs AUIRF3805
IRF3805PBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier AUIRF3805 vs IRF3805PBF
IRF3805 Power Field-Effect Transistor, 220A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG AUIRF3805 vs IRF3805
Part Number Description Manufacturer Compare
IRF3805PBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG AUIRF3805 vs IRF3805PBF
IRF3805PBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier AUIRF3805 vs IRF3805PBF
AUIRF3805 Power Field-Effect Transistor, 160A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 International Rectifier AUIRF3805 vs AUIRF3805
IRF3805 Power Field-Effect Transistor, 220A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG AUIRF3805 vs IRF3805

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