Datasheets
AUIRFR120Z by:

Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3

Part Details for AUIRFR120Z by Infineon Technologies AG

Overview of AUIRFR120Z by Infineon Technologies AG

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Price & Stock for AUIRFR120Z

Part # Distributor Description Stock Price Buy
DISTI # 23AK0401
Newark Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19Ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor Fet, To-252Aa |Infineon AUIRFR120Z Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $1.8400
  • 10 $1.5700
  • 100 $1.2600
  • 500 $1.1600
  • 1,000 $1.0400
  • 2,500 $0.8450
$0.8450 / $1.8400 Buy Now
Onlinecomponents.com   2870 Partner Stock
  • 38 $0.8670
  • 800 $0.8260
  • 2,000 $0.7850
  • 5,000 $0.7550
  • 14,000 $0.7340
$0.7340 / $0.8670 Buy Now
Rochester Electronics AUIRFR120 - 75V-100V N-Channel Automotive MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 2625
  • 1 $0.5250
  • 25 $0.5145
  • 100 $0.4935
  • 500 $0.4725
  • 1,000 $0.4463
$0.4463 / $0.5250 Buy Now
DISTI # SP001516680
EBV Elektronik Trans MOSFET N-CH 100V 8.7A 3-Pin(2+Tab) DPAK Tube (Alt: SP001516680) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 7 Weeks, 4 Days EBV - 0
Buy Now
DISTI # 1865608
Farnell MOSFET,W DIODE,N CH,100V,8.7A,DPAK RoHS: Compliant Min Qty: 5 Lead time: 43 Weeks, 1 Days Container: Each 0
  • 5 $1.0548
  • 25 $0.9481
  • 100 $0.7283
  • 250 $0.6869
  • 500 $0.6442
  • 1,000 $0.4797
  • 5,000 $0.4747
$0.4747 / $1.0548 Buy Now

Part Details for AUIRFR120Z

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AUIRFR120Z Part Data Attributes:

AUIRFR120Z Infineon Technologies AG
Buy Now Datasheet
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AUIRFR120Z Infineon Technologies AG Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description DPAK-3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 20 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 8.7 A
Drain-source On Resistance-Max 0.19 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 35 W
Pulsed Drain Current-Max (IDM) 35 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for AUIRFR120Z

This table gives cross-reference parts and alternative options found for AUIRFR120Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRFR120Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFR120ZTRLPBF Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier AUIRFR120Z vs IRFR120ZTRLPBF
IRFR120ZPBF Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier AUIRFR120Z vs IRFR120ZPBF
IRFR120ZTRRPBF Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier AUIRFR120Z vs IRFR120ZTRRPBF
AUIRFR120ZTRL Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 International Rectifier AUIRFR120Z vs AUIRFR120ZTRL
AUIRFR120ZTRR Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 International Rectifier AUIRFR120Z vs AUIRFR120ZTRR
IRFR120ZTRL Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 International Rectifier AUIRFR120Z vs IRFR120ZTRL
IRFR120ZTRPBF Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier AUIRFR120Z vs IRFR120ZTRPBF
AUIRFR120ZTRL Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Infineon Technologies AG AUIRFR120Z vs AUIRFR120ZTRL
IRFR120ZTRRPBF Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG AUIRFR120Z vs IRFR120ZTRRPBF
AUIRFR120Z Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 International Rectifier AUIRFR120Z vs AUIRFR120Z
Part Number Description Manufacturer Compare
IRFR120ZTRRPBF Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier AUIRFR120Z vs IRFR120ZTRRPBF
AUIRFR120ZTRR Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 International Rectifier AUIRFR120Z vs AUIRFR120ZTRR
IRFR120ZTRPBF Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier AUIRFR120Z vs IRFR120ZTRPBF
IRFR120ZTRRPBF Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG AUIRFR120Z vs IRFR120ZTRRPBF
AUIRFR120ZTRL Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Infineon Technologies AG AUIRFR120Z vs AUIRFR120ZTRL
IRFR120ZTRLPBF Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier AUIRFR120Z vs IRFR120ZTRLPBF
AUIRFR120ZTRL Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 International Rectifier AUIRFR120Z vs AUIRFR120ZTRL
IRFR120ZTRL Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 International Rectifier AUIRFR120Z vs IRFR120ZTRL
IRFR120ZTRR Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 International Rectifier AUIRFR120Z vs IRFR120ZTRR
IRFR120ZPBF Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier AUIRFR120Z vs IRFR120ZPBF

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