Part Details for AUIRFR120Z by Infineon Technologies AG
Overview of AUIRFR120Z by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for AUIRFR120Z
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
23AK0401
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Newark | Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19Ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor Fet, To-252Aa |Infineon AUIRFR120Z Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.8450 / $1.8400 | Buy Now |
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Onlinecomponents.com |
2870 Partner Stock |
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$0.7340 / $0.8670 | Buy Now | |
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Rochester Electronics | AUIRFR120 - 75V-100V N-Channel Automotive MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 2625 |
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$0.4463 / $0.5250 | Buy Now |
DISTI #
SP001516680
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EBV Elektronik | Trans MOSFET N-CH 100V 8.7A 3-Pin(2+Tab) DPAK Tube (Alt: SP001516680) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 7 Weeks, 4 Days | EBV - 0 |
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Buy Now | |
DISTI #
1865608
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Farnell | MOSFET,W DIODE,N CH,100V,8.7A,DPAK RoHS: Compliant Min Qty: 5 Lead time: 43 Weeks, 1 Days Container: Each | 0 |
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$0.4747 / $1.0548 | Buy Now |
Part Details for AUIRFR120Z
AUIRFR120Z CAD Models
AUIRFR120Z Part Data Attributes:
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AUIRFR120Z
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
AUIRFR120Z
Infineon Technologies AG
Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | DPAK-3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 20 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 8.7 A | |
Drain-source On Resistance-Max | 0.19 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 35 W | |
Pulsed Drain Current-Max (IDM) | 35 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for AUIRFR120Z
This table gives cross-reference parts and alternative options found for AUIRFR120Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRFR120Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFR120ZTRLPBF | Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | AUIRFR120Z vs IRFR120ZTRLPBF |
IRFR120ZPBF | Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | AUIRFR120Z vs IRFR120ZPBF |
IRFR120ZTRRPBF | Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | AUIRFR120Z vs IRFR120ZTRRPBF |
AUIRFR120ZTRL | Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | AUIRFR120Z vs AUIRFR120ZTRL |
AUIRFR120ZTRR | Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | AUIRFR120Z vs AUIRFR120ZTRR |
IRFR120ZTRL | Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | AUIRFR120Z vs IRFR120ZTRL |
IRFR120ZTRPBF | Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | AUIRFR120Z vs IRFR120ZTRPBF |
AUIRFR120ZTRL | Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Infineon Technologies AG | AUIRFR120Z vs AUIRFR120ZTRL |
IRFR120ZTRRPBF | Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | AUIRFR120Z vs IRFR120ZTRRPBF |
AUIRFR120Z | Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | AUIRFR120Z vs AUIRFR120Z |