Datasheets
AUIRFS3107-7TRL by:

Power Field-Effect Transistor, 240A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7

Part Details for AUIRFS3107-7TRL by Infineon Technologies AG

Results Overview of AUIRFS3107-7TRL by Infineon Technologies AG

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AUIRFS3107-7TRL Information

AUIRFS3107-7TRL by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for AUIRFS3107-7TRL

Part # Distributor Description Stock Price Buy
DISTI # AUIRFS3107-7TRL
Avnet Americas Trans MOSFET N-CH 75V 260A 7-Pin(6+Tab) D2PAK T/R - Tape and Reel (Alt: AUIRFS3107-7TRL) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 800 $4.8510
  • 1,600 $3.9111
  • 3,200 $3.8806
  • 4,800 $3.8537
  • 6,400 $3.8246
$3.8246 / $4.8510 Buy Now
DISTI # SP001520264
EBV Elektronik Trans MOSFET NCH 75V 260A 7Pin6Tab D2PAK TR (Alt: SP001520264) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for AUIRFS3107-7TRL

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AUIRFS3107-7TRL Part Data Attributes

AUIRFS3107-7TRL Infineon Technologies AG
Buy Now Datasheet
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AUIRFS3107-7TRL Infineon Technologies AG Power Field-Effect Transistor, 240A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description D2PAK-7
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 320 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V
Drain Current-Max (ID) 240 A
Drain-source On Resistance-Max 0.0026 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263CB
JESD-30 Code R-PSSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 370 W
Pulsed Drain Current-Max (IDM) 1060 A
Surface Mount YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

AUIRFS3107-7TRL Related Parts

AUIRFS3107-7TRL Frequently Asked Questions (FAQ)

  • Infineon provides a recommended PCB layout in their application note AN2014-01, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.

  • Infineon recommends using a gate driver with a peak current capability of at least 2A and a voltage rating that matches the MOSFET's gate-source voltage. The driver should also have a low output impedance to ensure fast switching times.

  • The maximum allowed voltage for the gate-source pin is ±20V, and for the drain-source pin, it's 30V. Exceeding these voltage limits can damage the device.

  • To ensure the SOA is not exceeded, calculate the device's power dissipation using the datasheet's thermal impedance and power loss curves. Then, verify that the calculated power dissipation is within the SOA boundaries.

  • The AUIRFS3107-7TRL is suitable for switching frequencies up to 100 kHz. However, the optimal frequency range depends on the specific application and should be evaluated based on the device's switching losses, thermal performance, and electromagnetic compatibility (EMC) requirements.

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