Part Details for AUIRFS3107-7TRL by Infineon Technologies AG
Results Overview of AUIRFS3107-7TRL by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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AUIRFS3107-7TRL Information
AUIRFS3107-7TRL by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRFS3107-7TRL
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
AUIRFS3107-7TRL
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Avnet Americas | Trans MOSFET N-CH 75V 260A 7-Pin(6+Tab) D2PAK T/R - Tape and Reel (Alt: AUIRFS3107-7TRL) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$3.8246 / $4.8510 | Buy Now |
DISTI #
SP001520264
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EBV Elektronik | Trans MOSFET NCH 75V 260A 7Pin6Tab D2PAK TR (Alt: SP001520264) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for AUIRFS3107-7TRL
AUIRFS3107-7TRL CAD Models
AUIRFS3107-7TRL Part Data Attributes
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AUIRFS3107-7TRL
Infineon Technologies AG
Buy Now
Datasheet
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AUIRFS3107-7TRL
Infineon Technologies AG
Power Field-Effect Transistor, 240A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | D2PAK-7 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 320 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 75 V | |
Drain Current-Max (ID) | 240 A | |
Drain-source On Resistance-Max | 0.0026 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263CB | |
JESD-30 Code | R-PSSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 370 W | |
Pulsed Drain Current-Max (IDM) | 1060 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |