Part Details for AUIRFS3307Z by Infineon Technologies AG
Overview of AUIRFS3307Z by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for AUIRFS3307Z
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
AUIRFS3307Z
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Avnet Americas | Trans MOSFET N-CH 75V 128A 3-Pin(2+Tab) D2PAK Tube - Rail/Tube (Alt: AUIRFS3307Z) RoHS: Compliant Min Qty: 3000 Package Multiple: 50 Container: Tube | 0 |
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RFQ | |
DISTI #
70411704
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RS | AUIRFS3307Z N-channel MOSFET Transistor, 120 A, 128 A, 75 V, 3-Pin D2PAK | Infineon AUIRFS3307Z RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$3.2200 / $3.7900 | RFQ |
DISTI #
AUIRFS3307Z
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Avnet Americas | Trans MOSFET N-CH 75V 128A 3-Pin(2+Tab) D2PAK Tube - Rail/Tube (Alt: AUIRFS3307Z) RoHS: Compliant Min Qty: 3000 Package Multiple: 50 Container: Tube | 0 |
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RFQ | |
DISTI #
SP001519782
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EBV Elektronik | Trans MOSFET N-CH 75V 128A 3-Pin(2+Tab) D2PAK Tube (Alt: SP001519782) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Part Details for AUIRFS3307Z
AUIRFS3307Z CAD Models
AUIRFS3307Z Part Data Attributes:
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AUIRFS3307Z
Infineon Technologies AG
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Datasheet
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AUIRFS3307Z
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | D2PAK-3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 140 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 75 V | |
Drain Current-Max (ID) | 120 A | |
Drain-source On Resistance-Max | 0.0058 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 230 W | |
Pulsed Drain Current-Max (IDM) | 480 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |