Part Details for AUIRFSL3206 by International Rectifier
Overview of AUIRFSL3206 by International Rectifier
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for AUIRFSL3206
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-AUIRFSL3206-ND
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DigiKey | AUTOMOTIVE HEXFET N CHANNEL Min Qty: 160 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
250 In Stock |
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$1.8800 | Buy Now |
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Bristol Electronics | 223 |
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RFQ | ||
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Quest Components | 178 |
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$2.3976 / $3.8880 | Buy Now | |
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Rochester Electronics | AUIRFSL3206 - 55V-60V N-Channel Automotive MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 250 |
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$1.6100 / $1.9000 | Buy Now |
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ComSIT USA | AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | Europe - 200 |
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RFQ |
Part Details for AUIRFSL3206
AUIRFSL3206 CAD Models
AUIRFSL3206 Part Data Attributes:
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AUIRFSL3206
International Rectifier
Buy Now
Datasheet
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Compare Parts:
AUIRFSL3206
International Rectifier
Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-262AA | |
Package Description | ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 170 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 120 A | |
Drain-source On Resistance-Max | 0.003 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-262AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 840 A | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |