Datasheets
AUIRFZ44Z by:

Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

Part Details for AUIRFZ44Z by Infineon Technologies AG

Overview of AUIRFZ44Z by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for AUIRFZ44Z

Part # Distributor Description Stock Price Buy
Rochester Electronics AUIRFZ44 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 4100
  • 1 $0.9081
  • 25 $0.8899
  • 100 $0.8536
  • 500 $0.8173
  • 1,000 $0.7719
$0.7719 / $0.9081 Buy Now
Chip1Cloud MOSFET N-CH 55V 51A TO220AB 21900
RFQ
DISTI # 1864547
Farnell MOSFET,N CH,55V,51A,TO220AB RoHS: Compliant Min Qty: 1 Lead time: 43 Weeks, 1 Days Container: Each 0
  • 1 $1.9788
  • 10 $1.5154
  • 100 $1.1823
  • 250 $1.1071
  • 500 $1.0320
  • 1,000 $0.9406
$0.9406 / $1.9788 Buy Now

Part Details for AUIRFZ44Z

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AUIRFZ44Z Part Data Attributes:

AUIRFZ44Z Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
AUIRFZ44Z Infineon Technologies AG Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ROHS COMPLIANT, PLASTIC PACKAGE-3
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 105 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 51 A
Drain-source On Resistance-Max 0.0139 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 80 W
Pulsed Drain Current-Max (IDM) 200 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for AUIRFZ44Z

This table gives cross-reference parts and alternative options found for AUIRFZ44Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRFZ44Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFZ44ZPBF Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG AUIRFZ44Z vs IRFZ44ZPBF
Part Number Description Manufacturer Compare
IRFZ44ZPBF Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG AUIRFZ44Z vs IRFZ44ZPBF

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