Part Details for AUIRGP35B60PD by International Rectifier
Overview of AUIRGP35B60PD by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for AUIRGP35B60PD
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | AUTOMOTIVE GRADE WARP2 IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC RoHS: Compliant | Europe - 100 |
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RFQ | |
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Chip1Cloud | WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE | 7500 |
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RFQ |
Part Details for AUIRGP35B60PD
AUIRGP35B60PD CAD Models
AUIRGP35B60PD Part Data Attributes:
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AUIRGP35B60PD
International Rectifier
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Datasheet
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AUIRGP35B60PD
International Rectifier
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC, ROHS COMPLIANT PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-247AC | |
| Package Description | ROHS COMPLIANT PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGHER RELIABILITY | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 60 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 16 ns | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 308 W | |
| Rise Time-Max (tr) | 11 ns | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 142 ns | |
| Turn-on Time-Nom (ton) | 34 ns |