There are no models available for this part yet.
Overview of AUIRL3705ZS by International Rectifier
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 9 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for AUIRL3705ZS by International Rectifier
Part # | Manufacturer | Description | Stock | Price | Buy | ||
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DISTI #
2156-AUIRL3705ZS-IR-ND
|
DigiKey | MOSFET N-CH 55V 75A D2PAK Min Qty: 205 Container: Bulk MARKETPLACE PRODUCT |
8500 In Stock |
|
$1.4700 | Buy Now | |
Rochester Electronics | AUIRL3705 - 55V-60V N-Channel Automotive MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 8500 |
|
$1.2600 / $1.4800 | Buy Now | ||
ComSIT USA | AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant |
|
|
RFQ |
CAD Models for AUIRL3705ZS by International Rectifier
Part Data Attributes for AUIRL3705ZS by International Rectifier
|
|
---|---|
Pbfree Code
|
Yes
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Rohs Code
|
Yes
|
Part Life Cycle Code
|
Transferred
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Ihs Manufacturer
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INTERNATIONAL RECTIFIER CORP
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Part Package Code
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D2PAK
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Package Description
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ROHS COMPLIANT, PLASTIC, D2PAK-3
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Pin Count
|
3
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Reach Compliance Code
|
compliant
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ECCN Code
|
EAR99
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Additional Feature
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AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
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Avalanche Energy Rating (Eas)
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180 mJ
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Case Connection
|
DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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55 V
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Drain Current-Max (ID)
|
75 A
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Drain-source On Resistance-Max
|
0.008 Ω
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-263AB
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JESD-30 Code
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R-PSSO-G2
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JESD-609 Code
|
e3
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Moisture Sensitivity Level
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1
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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175 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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130 W
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Pulsed Drain Current-Max (IDM)
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340 A
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Finish
|
MATTE TIN OVER NICKEL
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Terminal Form
|
GULL WING
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Terminal Position
|
SINGLE
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Transistor Application
|
SWITCHING
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Transistor Element Material
|
SILICON
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Alternate Parts for AUIRL3705ZS
This table gives cross-reference parts and alternative options found for AUIRL3705ZS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRL3705ZS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRL3705ZSPBF | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | AUIRL3705ZS vs IRL3705ZSPBF |
AUIRL3705ZSTRL | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | Infineon Technologies AG | AUIRL3705ZS vs AUIRL3705ZSTRL |
AUIRL3705ZS | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | Infineon Technologies AG | AUIRL3705ZS vs AUIRL3705ZS |
IRL3705ZSTRRPBF | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | AUIRL3705ZS vs IRL3705ZSTRRPBF |
IRL3705ZSTRLPBF | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | AUIRL3705ZS vs IRL3705ZSTRLPBF |
IRL3705ZSTRR | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | AUIRL3705ZS vs IRL3705ZSTRR |
IRL3705ZS | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | AUIRL3705ZS vs IRL3705ZS |
IRL3705ZSTRRPBF | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | AUIRL3705ZS vs IRL3705ZSTRRPBF |
IRL3705ZSTRL | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | AUIRL3705ZS vs IRL3705ZSTRL |
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