Part Details for AUIRLR120NTRL by Infineon Technologies AG
Overview of AUIRLR120NTRL by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for AUIRLR120NTRL
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | AUIRLR120N - 75V-100V N-Channel Automotive MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 14630 |
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$0.8700 / $1.0200 | Buy Now |
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CHIPMALL.COM LIMITED | Q101 100V N HEXFET Power MOSFET, D-Pak | 104 |
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$1.3025 | Buy Now |
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DISTI #
3227609
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element14 Asia-Pacific | MOSFET, N-CH, 100V, 175DEG C, 48W RoHS: Compliant Min Qty: 1 Container: Cut Tape | 4471 |
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$0.9671 / $2.0148 | Buy Now |
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DISTI #
3227609RL
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element14 Asia-Pacific | MOSFET, N-CH, 100V, 175DEG C, 48W RoHS: Compliant Min Qty: 100 Container: Reel | 4471 |
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$0.9671 / $1.3408 | Buy Now |
Part Details for AUIRLR120NTRL
AUIRLR120NTRL CAD Models
AUIRLR120NTRL Part Data Attributes
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AUIRLR120NTRL
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
AUIRLR120NTRL
Infineon Technologies AG
Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 52 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 85 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.225 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 48 W | |
| Pulsed Drain Current-Max (IDM) | 35 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AUIRLR120NTRL
This table gives cross-reference parts and alternative options found for AUIRLR120NTRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRLR120NTRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLR120NTRL | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | AUIRLR120NTRL vs IRLR120NTRL |
| AUIRLR120NTR | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | AUIRLR120NTRL vs AUIRLR120NTR |
| IRLR120N | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Fairchild Semiconductor Corporation | AUIRLR120NTRL vs IRLR120N |
| IRLR120NTRPBF | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | AUIRLR120NTRL vs IRLR120NTRPBF |
| IRLR120N | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | AUIRLR120NTRL vs IRLR120N |
| IRLR120NTRR | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | AUIRLR120NTRL vs IRLR120NTRR |
| IRLR120NTRPBF | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | AUIRLR120NTRL vs IRLR120NTRPBF |
| AUIRLR120N | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | AUIRLR120NTRL vs AUIRLR120N |
| IRLR120NPBF | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | AUIRLR120NTRL vs IRLR120NPBF |
| AUIRLR120N | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | AUIRLR120NTRL vs AUIRLR120N |