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Part Details for AUIRLS3034 by Infineon Technologies AG
Overview of AUIRLS3034 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for AUIRLS3034
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | AUIRLS3034 - 20V-40V N-Channel Automotive MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 12200 |
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$2.4200 / $2.8500 | Buy Now |
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DISTI #
AUIRLS3034
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TME | Transistor: N-MOSFET, unipolar, 40V, 243A, 375W, DPAK Min Qty: 1 | 0 |
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$4.8500 / $6.7900 | RFQ |
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DISTI #
2148075
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Farnell | MOSFET, N-CH, 40V, 343A, D2PAK RoHS: Compliant Min Qty: 1 Lead time: 17 Weeks, 1 Days Container: Each | 0 |
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$2.0943 / $5.0970 | Buy Now |
Part Details for AUIRLS3034
AUIRLS3034 CAD Models
AUIRLS3034 Part Data Attributes:
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AUIRLS3034
Infineon Technologies AG
Buy Now
Datasheet
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AUIRLS3034
Infineon Technologies AG
Power Field-Effect Transistor, 195A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | ROHS COMPLIANT, PLASTIC, D2PAK-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 255 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 195 A | |
| Drain-source On Resistance-Max | 0.0017 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 375 W | |
| Pulsed Drain Current-Max (IDM) | 1372 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |