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Part Details for BBS3002-DL-1E by onsemi
Overview of BBS3002-DL-1E by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Computing and Data Storage
Price & Stock for BBS3002-DL-1E
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
42AC1708
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Newark | Mosfet, P-Ch, -60V, -100A, To-263-3, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:- Rohs Compliant: Yes |Onsemi BBS3002-DL-1E RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
Buy Now | |
|
DISTI #
56W5114
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Newark | Pch 4V Drive Series/Reel |Onsemi BBS3002-DL-1E RoHS: Not Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
Buy Now | |
|
|
Win Source Electronics | MOSFET P-CH 60V 100A D2PAK | 5555 |
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$33.4286 / $50.1428 | Buy Now |
Part Details for BBS3002-DL-1E
BBS3002-DL-1E CAD Models
BBS3002-DL-1E Part Data Attributes
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BBS3002-DL-1E
onsemi
Buy Now
Datasheet
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Compare Parts:
BBS3002-DL-1E
onsemi
P-Channel Power MOSFET, -60V, -100A, 5.8mΩ, D2PAK / TO-263-2L, 800-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | SC-83, TO-263, D2PAK-3/2 | |
| Pin Count | 2 | |
| Manufacturer Package Code | 418AP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 340 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.009 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 950 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 90 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |