Part Details for BC212B by Central Semiconductor Corp
Overview of BC212B by Central Semiconductor Corp
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
Price & Stock for BC212B
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
BC212B
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Avnet Americas | Bipolar Transistor PNP Low Noise 50V 200mA 3-Pin TO-92 Through Hole Box - Boxed Product (Development Kits) (Alt: BC212B) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Container: Box | 0 |
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RFQ | |
DISTI #
BC212B
|
Avnet Americas | Bipolar Transistor PNP Low Noise 50V 200mA 3-Pin TO-92 Through Hole Box - Boxed Product (Development Kits) (Alt: BC212B) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Container: Box | 0 |
|
RFQ |
Part Details for BC212B
BC212B CAD Models
BC212B Part Data Attributes:
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BC212B
Central Semiconductor Corp
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Datasheet
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BC212B
Central Semiconductor Corp
Small Signal Bipolar Transistor,
|
Part Life Cycle Code | Active | |
Ihs Manufacturer | CENTRAL SEMICONDUCTOR CORP | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.75 | |
Date Of Intro | 2018-01-30 | |
Samacsys Manufacturer | Central Semiconductor | |
Additional Feature | LOW NOISE | |
Collector Current-Max (IC) | 0.2 A | |
Collector-Base Capacitance-Max | 6 pF | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 200 | |
JEDEC-95 Code | TO-92 | |
JESD-30 Code | O-PBCY-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | PNP | |
Power Dissipation Ambient-Max | 0.3 W | |
Power Dissipation-Max (Abs) | 0.3 W | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | BOTTOM | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 200 MHz | |
VCEsat-Max | 0.6 V |