Part Details for BC858C by National Semiconductor Corporation
Overview of BC858C by National Semiconductor Corporation
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Part Details for BC858C
BC858C CAD Models
BC858C Part Data Attributes
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BC858C
National Semiconductor Corporation
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BC858C
National Semiconductor Corporation
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NATIONAL SEMICONDUCTOR CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | LOW NOISE | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Emitter Voltage-Max | 30 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 125 | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | PNP | |
Power Dissipation-Max (Abs) | 0.3 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 300 MHz |