Part Details for BC859 by Diodes Incorporated
Overview of BC859 by Diodes Incorporated
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- Part Data Attributes: (Available)
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Applications
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Part Details for BC859
BC859 CAD Models
BC859 Part Data Attributes
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BC859
Diodes Incorporated
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Datasheet
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BC859
Diodes Incorporated
Transistor
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Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.75 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Base Capacitance-Max | 4.5 pF | |
Collector-Emitter Voltage-Max | 30 V | |
Configuration | SINGLE | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | PNP | |
Power Dissipation Ambient-Max | 0.3 W | |
Power Dissipation-Max (Abs) | 0.3 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 300 MHz | |
VCEsat-Max | 0.6 V |