Part Details for BCV62B by Galaxy Microelectronics
Overview of BCV62B by Galaxy Microelectronics
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for BCV62B
BCV62B CAD Models
BCV62B Part Data Attributes
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BCV62B
Galaxy Microelectronics
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Datasheet
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BCV62B
Galaxy Microelectronics
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 2-Element, PNP, Silicon, SOT-143, 4 PIN
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
| Package Description | SOT-143, 4 PIN | |
| Reach Compliance Code | unknown | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Base Capacitance-Max | 4.5 pF | |
| Collector-Emitter Voltage-Max | 30 V | |
| Configuration | COMMON BASE, 2 ELEMENTS | |
| DC Current Gain-Min (hFE) | 220 | |
| JESD-30 Code | R-PDSO-G4 | |
| Number of Elements | 2 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | PNP | |
| Power Dissipation-Max (Abs) | 0.25 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 100 MHz | |
| VCEsat-Max | 0.65 V |