Part Details for BCW66GE6327 by Infineon Technologies AG
Overview of BCW66GE6327 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for BCW66GE6327
Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | NPN SILICON AF TRANSISTOR Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon RoHS: Compliant | Europe - 1550 |
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RFQ |
Part Details for BCW66GE6327
BCW66GE6327 CAD Models
BCW66GE6327 Part Data Attributes
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BCW66GE6327
Infineon Technologies AG
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Datasheet
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BCW66GE6327
Infineon Technologies AG
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 0.8 A | |
Collector-Emitter Voltage-Max | 45 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 60 | |
JESD-30 Code | R-PDSO-G3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.33 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 170 MHz |
Alternate Parts for BCW66GE6327
This table gives cross-reference parts and alternative options found for BCW66GE6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BCW66GE6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BCW66GTA | Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN | Diodes Incorporated | BCW66GE6327 vs BCW66GTA |
BCW66G | Small Signal Bipolar Transistor | Secos Corporation | BCW66GE6327 vs BCW66G |
BCW66G | NPN General Purpose Amplifier, 3000-REEL | onsemi | BCW66GE6327 vs BCW66G |
BCW66GTR13LEADFREE | Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, | Central Semiconductor Corp | BCW66GE6327 vs BCW66GTR13LEADFREE |
BCW66GTR13 | Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, | Central Semiconductor Corp | BCW66GE6327 vs BCW66GTR13 |
BCW66GBKLEADFREE | Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, | Central Semiconductor Corp | BCW66GE6327 vs BCW66GBKLEADFREE |
BCW66G | Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, SOT-23, 3 PIN | Infineon Technologies AG | BCW66GE6327 vs BCW66G |
BCW66G | Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 | Central Semiconductor Corp | BCW66GE6327 vs BCW66G |
BCW66GLT1G | NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL | onsemi | BCW66GE6327 vs BCW66GLT1G |
BCW66GBK | Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, | Central Semiconductor Corp | BCW66GE6327 vs BCW66GBK |