Datasheets
BD676AS by:

PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), 2000/BULK

Part Details for BD676AS by Fairchild Semiconductor Corporation

Results Overview of BD676AS by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

BD676AS Information

BD676AS by Fairchild Semiconductor Corporation is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BD676AS

Part # Distributor Description Stock Price Buy
Rochester Electronics Power Bipolar Transistor, 4A, 45V, PNP, TO-126, Plastic/Epoxy, 3 Pin RoHS: Compliant Status: Obsolete Min Qty: 1 11364
  • 1 $0.2925
  • 25 $0.2866
  • 100 $0.2749
  • 500 $0.2632
  • 1,000 $0.2486
$0.2486 / $0.2925 Buy Now
ComSIT USA PNP EPITAXIAL SILICON TRANSISTOR Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin , ECCN: EAR99 RoHS: Compliant Stock DE - 3584
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for BD676AS

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BD676AS Part Data Attributes

BD676AS Fairchild Semiconductor Corporation
Buy Now Datasheet
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BD676AS Fairchild Semiconductor Corporation PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), 2000/BULK
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-126
Pin Count 3
Manufacturer Package Code TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD)
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Collector Current-Max (IC) 4 A
Collector-Emitter Voltage-Max 45 V
Configuration DARLINGTON
DC Current Gain-Min (hFE) 750
JEDEC-95 Code TO-126
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 40 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

BD676AS Related Parts

BD676AS Frequently Asked Questions (FAQ)

  • The BD676AS can operate safely between -40°C to 150°C, but the recommended operating temperature range is -20°C to 125°C for optimal performance.

  • To ensure proper biasing, make sure to provide a stable input voltage (VIN) between 8V to 40V, and a bias voltage (VCC) between 5V to 15V. Also, ensure the input current (IIN) is within the recommended range of 1mA to 10mA.

  • To minimize noise and EMI, it's recommended to use a multi-layer PCB with a solid ground plane, keep the input and output traces short and separate, and use a common-mode choke or ferrite bead to filter the input voltage.

  • Yes, the BD676AS is suitable for high-reliability and automotive applications due to its high operating temperature range, low dropout voltage, and high current capability. However, ensure you follow the recommended operating conditions and design guidelines to meet the specific application requirements.

  • To protect the BD676AS from overvoltage and overcurrent conditions, use a voltage regulator with overvoltage protection (OVP) and overcurrent protection (OCP) features. You can also add external components such as zener diodes, TVS diodes, or fuses to provide additional protection.

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