Datasheets
BD676AS by:

4.0 A, 45 V PNP Darlington Bipolar Power Transistor, TO-126-3, 2000-BLKBG

Part Details for BD676AS by onsemi

Results Overview of BD676AS by onsemi

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

BD676AS Information

BD676AS by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BD676AS

Part # Distributor Description Stock Price Buy
DISTI # BD676AS
Avnet Silica Trans Darlington PNP 45V 4A 3Pin3Tab TO126 Bulk (Alt: BD676AS) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 143 Weeks, 0 Days Silica - 0
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DISTI # BD676AS
EBV Elektronik Trans Darlington PNP 45V 4A 3Pin3Tab TO126 Bulk (Alt: BD676AS) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 143 Weeks, 0 Days EBV - 0
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Part Details for BD676AS

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BD676AS Part Data Attributes

BD676AS onsemi
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BD676AS onsemi 4.0 A, 45 V PNP Darlington Bipolar Power Transistor, TO-126-3, 2000-BLKBG
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code TO-126-3
Manufacturer Package Code 340AS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Collector Current-Max (IC) 4 A
Collector-Emitter Voltage-Max 45 V
Configuration DARLINGTON
DC Current Gain-Min (hFE) 750
JEDEC-95 Code TO-126
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 40 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

BD676AS Related Parts

BD676AS Frequently Asked Questions (FAQ)

  • A recommended PCB layout for optimal thermal performance would be to use a 2-layer or 4-layer board with a solid ground plane on the bottom layer, and to place thermal vias under the IC to dissipate heat efficiently.

  • To ensure stable operation with a high-ESR output capacitor, it's recommended to add a small ceramic capacitor (e.g., 100nF) in parallel with the output capacitor to improve the overall capacitor ESR and reduce the risk of oscillation.

  • The maximum allowed voltage on the EN pin is 6V, which is the same as the maximum voltage rating of the IC. Applying a voltage higher than 6V on the EN pin may damage the IC.

  • The BD676AS is rated for operation up to 125°C, but it's recommended to derate the output current and voltage according to the temperature derating curve in the datasheet to ensure reliable operation in high-temperature environments.

  • The power dissipation of the BD676AS can be calculated using the formula: Pd = (Vin * Iin) + (Vout * Iout) + (Iq * Vin), where Iq is the quiescent current, Vin is the input voltage, Iin is the input current, Vout is the output voltage, and Iout is the output current.

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