Part Details for BSC007N04LS6ATMA1 by Infineon Technologies AG
Results Overview of BSC007N04LS6ATMA1 by Infineon Technologies AG
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
BSC007N04LS6ATMA1 Information
BSC007N04LS6ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSC007N04LS6ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
02AH1039
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Newark | Mosfet, N-Ch, 40V, 100A, Tdson, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.3V Rohs Compliant: Yes |Infineon BSC007N04LS6ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 4123 |
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$1.3600 / $2.7700 | Buy Now |
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DISTI #
86AK4415
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Newark | Mosfet, N-Ch, 40V, 100A, Tdson Rohs Compliant: Yes |Infineon BSC007N04LS6ATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.4500 | Buy Now |
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DISTI #
BSC007N04LS6ATMA1
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Avnet Americas | DIFFERENTIATED MOSFETS - Tape and Reel (Alt: BSC007N04LS6ATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 5000 |
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$1.0929 / $1.1496 | Buy Now |
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DISTI #
BSC007N04LS6ATMA1
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Chip One Stop | Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 4770 |
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$1.4700 / $1.6700 | Buy Now |
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DISTI #
SP001629650
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EBV Elektronik | DIFFERENTIATED MOSFETS (Alt: SP001629650) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 19 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 13358 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 40V 100A TDSON-8-6 | 208333 |
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$0.8789 / $1.3183 | Buy Now |
Part Details for BSC007N04LS6ATMA1
BSC007N04LS6ATMA1 CAD Models
BSC007N04LS6ATMA1 Part Data Attributes
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BSC007N04LS6ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC007N04LS6ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 319A I(D), 40V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TDSON-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 674 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 319 A | |
| Drain-source On Resistance-Max | 0.001 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 89 pF | |
| JESD-30 Code | R-PDSO-F3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 188 W | |
| Pulsed Drain Current-Max (IDM) | 1524 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |